TY - JOUR
T1 - 11 Gb/s 140 GHz OOK modulator with 24.6 dB isolation utilising cascaded switch and amplifier-based stages in 65 nm bulk CMOS
AU - Yamazaki, Daisuke
AU - Otsuki, Yoshitaka
AU - Hara, Takafumi
AU - Khanh, Nguyen Ngoc Mai
AU - Iizuka, Tetsuya
N1 - Funding Information:
This work was supported by JSPS KAKENHI Grant no. 17H03244 and was also supported by the VLSI Design and Education Centre (VDEC), the University of Tokyo in collaboration with Synopsys, Inc., Cadence Design Systems, Inc. and Mentor Graphics, Inc. The authors are grateful to Professor Kenichi Okada at the Tokyo Institute of Technology and Professor Minoru Fujishima and Professor Shuhei Amakawa at Hiroshima University for their valuable advice on mm-wave circuit designs.
Publisher Copyright:
© The Institution of Engineering and Technology 2020.
PY - 2020/5/1
Y1 - 2020/5/1
N2 - This study presents a complementary metal-oxide-semiconductor (CMOS) 140 GHz on-off-keying (OOK) modulator with high isolation and low ON-state insertion loss based on a cascaded architecture of a switch-based and amplifier-based modulators. A prototype implemented in a 65 nm bulk CMOS process operates at 140 GHz carrier input and realises 24.6 dB isolation, whereas in ON-state it achieves 0.3 dB gain and â'0.2 dBm OP1 dB with 8 mW power consumption. Up to 11 Gb/s modulation is verified with the spectrum and demodulated waveform measurements. The proposed OOK modulator occupies the core area of 250×380 μm2.
AB - This study presents a complementary metal-oxide-semiconductor (CMOS) 140 GHz on-off-keying (OOK) modulator with high isolation and low ON-state insertion loss based on a cascaded architecture of a switch-based and amplifier-based modulators. A prototype implemented in a 65 nm bulk CMOS process operates at 140 GHz carrier input and realises 24.6 dB isolation, whereas in ON-state it achieves 0.3 dB gain and â'0.2 dBm OP1 dB with 8 mW power consumption. Up to 11 Gb/s modulation is verified with the spectrum and demodulated waveform measurements. The proposed OOK modulator occupies the core area of 250×380 μm2.
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U2 - 10.1049/iet-cds.2019.0377
DO - 10.1049/iet-cds.2019.0377
M3 - Article
AN - SCOPUS:85083378294
SN - 1751-858X
VL - 14
SP - 322
EP - 326
JO - IET Circuits, Devices and Systems
JF - IET Circuits, Devices and Systems
IS - 3
ER -