1.5μm InGaAlAs-strained MQW ridge-waveguide laser diodes with hot-carrier injection suppression structure

H. Fukano; Y. Noguchi; S. Kondo

doi:10.1049/el:19990074

1.5μm InGaAlAs-strained MQW ridge-waveguide laser diodes with hot-carrier injection suppression structure

H. Fukano, Y. Noguchi, S. Kondo

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The authors have developed a ridge-waveguide laser diode (LD) with a layer structure which suppresses hot-carrier injection into separate confinement heterostructure layers as well as effectively confining carriers in the multiquantum well layers. Fabricated LDs show low threshold currents and improved temperature characteristics due to a decrease in the leakage current outside the ridge-waveguide caused by reduced carrier diffusion length.

Original language	English
Pages (from-to)	41-43
Number of pages	3
Journal	Electronics Letters
Volume	35
Issue number	1
DOIs	https://doi.org/10.1049/el:19990074
Publication status	Published - Jan 7 1999
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19990074

Cite this

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abstract = "The authors have developed a ridge-waveguide laser diode (LD) with a layer structure which suppresses hot-carrier injection into separate confinement heterostructure layers as well as effectively confining carriers in the multiquantum well layers. Fabricated LDs show low threshold currents and improved temperature characteristics due to a decrease in the leakage current outside the ridge-waveguide caused by reduced carrier diffusion length.",

author = "H. Fukano and Y. Noguchi and S. Kondo",

year = "1999",

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AU - Fukano, H.

AU - Noguchi, Y.

AU - Kondo, S.

PY - 1999/1/7

Y1 - 1999/1/7

N2 - The authors have developed a ridge-waveguide laser diode (LD) with a layer structure which suppresses hot-carrier injection into separate confinement heterostructure layers as well as effectively confining carriers in the multiquantum well layers. Fabricated LDs show low threshold currents and improved temperature characteristics due to a decrease in the leakage current outside the ridge-waveguide caused by reduced carrier diffusion length.

AB - The authors have developed a ridge-waveguide laser diode (LD) with a layer structure which suppresses hot-carrier injection into separate confinement heterostructure layers as well as effectively confining carriers in the multiquantum well layers. Fabricated LDs show low threshold currents and improved temperature characteristics due to a decrease in the leakage current outside the ridge-waveguide caused by reduced carrier diffusion length.

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1.5μm InGaAlAs-strained MQW ridge-waveguide laser diodes with hot-carrier injection suppression structure

Abstract

ASJC Scopus subject areas

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