20 Gbit/s monolithic photoreceiver consisting of a waveguide pin photodiode and HEMT distributed amplifier

K. Takahata; Y. Muramoto; H. Fukano; K. Kato; A. Kozen; O. Nakajima; S. Kimura; Y. Imai

doi:10.1049/el:19971015

20 Gbit/s monolithic photoreceiver consisting of a waveguide pin photodiode and HEMT distributed amplifier

K. Takahata, Y. Muramoto, H. Fukano, K. Kato, A. Kozen, O. Nakajima, S. Kimura, Y. Imai

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A monolithic photoreceiver OEIC for λ = 1.55μm consisting of a waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplifier has been fabricated using a single-step MOVPE growth technique. It has a 3dB-down frequency of 20GHz and operates at 20Gbit/s with a sensitivity of-10.4dBm.

Original language	English
Pages (from-to)	1576-1577
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	18
DOIs	https://doi.org/10.1049/el:19971015
Publication status	Published - Aug 28 1997
Externally published	Yes

Keywords

Integrated optoelectronics
Optical receivers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19971015

Cite this

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title = "20 Gbit/s monolithic photoreceiver consisting of a waveguide pin photodiode and HEMT distributed amplifier",

abstract = "A monolithic photoreceiver OEIC for λ = 1.55μm consisting of a waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplifier has been fabricated using a single-step MOVPE growth technique. It has a 3dB-down frequency of 20GHz and operates at 20Gbit/s with a sensitivity of-10.4dBm.",

keywords = "Integrated optoelectronics, Optical receivers",

author = "K. Takahata and Y. Muramoto and H. Fukano and K. Kato and A. Kozen and O. Nakajima and S. Kimura and Y. Imai",

year = "1997",

month = aug,

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doi = "10.1049/el:19971015",

language = "English",

volume = "33",

pages = "1576--1577",

journal = "Electronics Letters",

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T1 - 20 Gbit/s monolithic photoreceiver consisting of a waveguide pin photodiode and HEMT distributed amplifier

AU - Takahata, K.

AU - Muramoto, Y.

AU - Fukano, H.

AU - Kato, K.

AU - Kozen, A.

AU - Nakajima, O.

AU - Kimura, S.

AU - Imai, Y.

PY - 1997/8/28

Y1 - 1997/8/28

N2 - A monolithic photoreceiver OEIC for λ = 1.55μm consisting of a waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplifier has been fabricated using a single-step MOVPE growth technique. It has a 3dB-down frequency of 20GHz and operates at 20Gbit/s with a sensitivity of-10.4dBm.

AB - A monolithic photoreceiver OEIC for λ = 1.55μm consisting of a waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplifier has been fabricated using a single-step MOVPE growth technique. It has a 3dB-down frequency of 20GHz and operates at 20Gbit/s with a sensitivity of-10.4dBm.

KW - Integrated optoelectronics

KW - Optical receivers

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UR - http://www.scopus.com/inward/citedby.url?scp=0031212241&partnerID=8YFLogxK

U2 - 10.1049/el:19971015

DO - 10.1049/el:19971015

M3 - Article

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SN - 0013-5194

VL - 33

SP - 1576

EP - 1577

JO - Electronics Letters

JF - Electronics Letters

IS - 18

ER -

20 Gbit/s monolithic photoreceiver consisting of a waveguide pin photodiode and HEMT distributed amplifier

Abstract

Keywords

ASJC Scopus subject areas

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