40 Gbit/s electroabsorption modulators with 1.1 V driving voltage

H. Fukano, T. Yamanaka, M. Tamura, H. Nakajima, Y. Akage, Y. Kondo, T. Saitoh

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


40 Gbit/s electioabsorption modulators with an RF extinction ratio of 10 dB and driven by a peak-to-peak voltage as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well layers with very good extinction characteristics and by optimising the number of wells and electroabsorption length.

Original languageEnglish
Pages (from-to)1144-1146
Number of pages3
JournalElectronics Letters
Issue number18
Publication statusPublished - Sept 2 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of '40 Gbit/s electroabsorption modulators with 1.1 V driving voltage'. Together they form a unique fingerprint.

Cite this