40 Gbit/s electroabsorption modulators with 1.1 V driving voltage

H. Fukano; T. Yamanaka; M. Tamura; H. Nakajima; Y. Akage; Y. Kondo; T. Saitoh

doi:10.1049/el:20045968

40 Gbit/s electroabsorption modulators with 1.1 V driving voltage

H. Fukano, T. Yamanaka, M. Tamura, H. Nakajima, Y. Akage, Y. Kondo, T. Saitoh

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

40 Gbit/s electioabsorption modulators with an RF extinction ratio of 10 dB and driven by a peak-to-peak voltage as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well layers with very good extinction characteristics and by optimising the number of wells and electroabsorption length.

Original language	English
Pages (from-to)	1144-1146
Number of pages	3
Journal	Electronics Letters
Volume	40
Issue number	18
DOIs	https://doi.org/10.1049/el:20045968
Publication status	Published - Sept 2 2004
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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abstract = "40 Gbit/s electioabsorption modulators with an RF extinction ratio of 10 dB and driven by a peak-to-peak voltage as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well layers with very good extinction characteristics and by optimising the number of wells and electroabsorption length.",

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AU - Fukano, H.

AU - Yamanaka, T.

AU - Tamura, M.

AU - Nakajima, H.

AU - Akage, Y.

AU - Kondo, Y.

AU - Saitoh, T.

PY - 2004/9/2

Y1 - 2004/9/2

N2 - 40 Gbit/s electioabsorption modulators with an RF extinction ratio of 10 dB and driven by a peak-to-peak voltage as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well layers with very good extinction characteristics and by optimising the number of wells and electroabsorption length.

AB - 40 Gbit/s electioabsorption modulators with an RF extinction ratio of 10 dB and driven by a peak-to-peak voltage as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well layers with very good extinction characteristics and by optimising the number of wells and electroabsorption length.

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ER -

40 Gbit/s electroabsorption modulators with 1.1 V driving voltage

Abstract

ASJC Scopus subject areas

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