5-nm-Order electron-beam lithography for nanodevice fabrication

Kenji Yamazaki, Hideo Namatsu

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)


We have developed 5-nm-order electron-beam (EB) lithography with good uniformity within a large main deflection field. The keys are a new electron optics system and a high-resolution resist (hydrogen silsesquioxane). Owing to the high resolution and good uniformity of the EB, the lithography can produce patterns with a minimum linewidth of 5 nm at the center and corners of the 500-μm-square main deflection field. Moreover, we accurately measured the beam diameter using a Si knife edge with Ta visors and thresholds of 50-90%. The measurement results agree well with the lithography results when the effect of secondary electrons is taken into consideration. These results demonstrate that high-precision 5-nm-order lithography has been established.

Original languageEnglish
Pages (from-to)3767-3771
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 B
Publication statusPublished - Jun 1 2004


  • Electron beam nanolithography
  • Hydrogen
  • Knife edge
  • Monte Carlo simulation
  • Secondary electron
  • Silsesquioxane

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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