TY - JOUR
T1 - A 140 GHz area-and-power-efficient VCO using frequency doubler in 65nm CMOS
AU - Otsuki, Yoshitaka
AU - Yamazaki, Daisuke
AU - Khanh, Nguyen Ngoc Mai
AU - Iizuka, Tetsuya
N1 - Funding Information:
This work was supported by JSPS KAKENHI Grant Num-
Funding Information:
ber 17H03244, and was also supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Synopsys, Inc., Cadence Design Systems, Inc., and Mentor Graphics, Inc. The authors are grateful to Professor Kenichi Okada at Tokyo Institute of Technology and Professor Minoru Fujishima and Professor Shuhei Amakawa at Hiroshima University for their valuable advice on millimeter-wave circuit designs.
Publisher Copyright:
© 2019 The Institute of Electronics, Information and Communication Engineers.
PY - 2019
Y1 - 2019
N2 - This paper presents a compact, low-phase-noise and low-power D-band VCO with the tuning range from 140.1 to 143.5 GHz. To improve the area and power efficiency, we avoid using signal amplification and matching circuits in the VCO, where a 70GHz LC oscillator is directly coupled to a frequency doubler. The layout of the transistors is optimized so that the signal loss and reflection are minimized. The proposed VCO fabricated in a 65 nm CMOS technology occupies the core area of 0.05mm2. It achieves the output power of -8 dBm and the phase noise of -108.2 dBc/Hz at 10MHz offset with the power consumption of 24mW from 1V supply, which leads to the figure-of-merit (FoM) of -177.4 dBc/Hz.
AB - This paper presents a compact, low-phase-noise and low-power D-band VCO with the tuning range from 140.1 to 143.5 GHz. To improve the area and power efficiency, we avoid using signal amplification and matching circuits in the VCO, where a 70GHz LC oscillator is directly coupled to a frequency doubler. The layout of the transistors is optimized so that the signal loss and reflection are minimized. The proposed VCO fabricated in a 65 nm CMOS technology occupies the core area of 0.05mm2. It achieves the output power of -8 dBm and the phase noise of -108.2 dBc/Hz at 10MHz offset with the power consumption of 24mW from 1V supply, which leads to the figure-of-merit (FoM) of -177.4 dBc/Hz.
KW - CMOs
KW - D-band
KW - Frequency doubler
KW - Millimeterwave silicon rfics
KW - Voltage-controlled oscillator (VCO)
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U2 - 10.1587/elex.16.20190051
DO - 10.1587/elex.16.20190051
M3 - Article
AN - SCOPUS:85065532656
SN - 1349-2543
VL - 16
JO - IEICE Electronics Express
JF - IEICE Electronics Express
IS - 6
M1 - 20190051
ER -