A compact X-band balanced frequency doubler on GaAs pHEMT 3D MMIC

Takana Kaho; Yo Yamaguchi; Hiroshi Okazaki; Kazuhiro Uehara

doi:10.1109/RFIT.2009.5383706

A compact X-band balanced frequency doubler on GaAs pHEMT 3D MMIC

Takana Kaho, Yo Yamaguchi, Hiroshi Okazaki, Kazuhiro Uehara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A compact GaAs pHEMT monolithic microwave integrated circuit balanced frequency doubler is presented. It is composed of a common-source/common-gate active balun, a balanced frequency doubler, and a band pass filter. Excellent miniaturization is achieved by using double-and triple-layer stacked inductors and a miniaturized stub as a band-pass filter with a thin-film microstrip line. The chip size is only 0.95 mm x 1.05 mm and power consumption is 63 mW. The measured conversion gain is -4 dB, and the fundamental and 3rd order frequency leakage to the 2nd order harmonic signal are less than -25 dB and -35 dB respectively.

Original language	English
Title of host publication	2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009
Pages	237-240
Number of pages	4
DOIs	https://doi.org/10.1109/RFIT.2009.5383706
Publication status	Published - Dec 1 2009
Externally published	Yes
Event	2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009 - Singapore, Singapore Duration: Jan 9 2009 → Jan 11 2009

Publication series

Name	2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009

Other

Other	2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009
Country/Territory	Singapore
City	Singapore
Period	1/9/09 → 1/11/09

Keywords

3D MMIC
Active balun
Balanced frequency doubler
Band-pass filter
Monolithic microwave integrated circuit (MMIC)
Stacked inductor

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1109/RFIT.2009.5383706

Cite this

Kaho, T., Yamaguchi, Y., Okazaki, H., & Uehara, K. (2009). A compact X-band balanced frequency doubler on GaAs pHEMT 3D MMIC. In 2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009 (pp. 237-240). [5383706] (2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009). https://doi.org/10.1109/RFIT.2009.5383706

A compact X-band balanced frequency doubler on GaAs pHEMT 3D MMIC. / Kaho, Takana; Yamaguchi, Yo; Okazaki, Hiroshi et al.
2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009. 2009. p. 237-240 5383706 (2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kaho, T, Yamaguchi, Y, Okazaki, H & Uehara, K 2009, A compact X-band balanced frequency doubler on GaAs pHEMT 3D MMIC. in 2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009., 5383706, 2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009, pp. 237-240, 2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009, Singapore, Singapore, 1/9/09. https://doi.org/10.1109/RFIT.2009.5383706

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abstract = "A compact GaAs pHEMT monolithic microwave integrated circuit balanced frequency doubler is presented. It is composed of a common-source/common-gate active balun, a balanced frequency doubler, and a band pass filter. Excellent miniaturization is achieved by using double-and triple-layer stacked inductors and a miniaturized stub as a band-pass filter with a thin-film microstrip line. The chip size is only 0.95 mm x 1.05 mm and power consumption is 63 mW. The measured conversion gain is -4 dB, and the fundamental and 3rd order frequency leakage to the 2nd order harmonic signal are less than -25 dB and -35 dB respectively.",

keywords = "3D MMIC, Active balun, Balanced frequency doubler, Band-pass filter, Monolithic microwave integrated circuit (MMIC), Stacked inductor",

author = "Takana Kaho and Yo Yamaguchi and Hiroshi Okazaki and Kazuhiro Uehara",

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N2 - A compact GaAs pHEMT monolithic microwave integrated circuit balanced frequency doubler is presented. It is composed of a common-source/common-gate active balun, a balanced frequency doubler, and a band pass filter. Excellent miniaturization is achieved by using double-and triple-layer stacked inductors and a miniaturized stub as a band-pass filter with a thin-film microstrip line. The chip size is only 0.95 mm x 1.05 mm and power consumption is 63 mW. The measured conversion gain is -4 dB, and the fundamental and 3rd order frequency leakage to the 2nd order harmonic signal are less than -25 dB and -35 dB respectively.

AB - A compact GaAs pHEMT monolithic microwave integrated circuit balanced frequency doubler is presented. It is composed of a common-source/common-gate active balun, a balanced frequency doubler, and a band pass filter. Excellent miniaturization is achieved by using double-and triple-layer stacked inductors and a miniaturized stub as a band-pass filter with a thin-film microstrip line. The chip size is only 0.95 mm x 1.05 mm and power consumption is 63 mW. The measured conversion gain is -4 dB, and the fundamental and 3rd order frequency leakage to the 2nd order harmonic signal are less than -25 dB and -35 dB respectively.

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KW - Band-pass filter

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A compact X-band balanced frequency doubler on GaAs pHEMT 3D MMIC

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Keywords

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