A low dark current stacked CMOS-APS for charged particle imaging

Isao Takayanagi; Junichi Nakamura; El Sayed Eid; Eric R. Fossum; Kazuhide Nagashima; Takuya Kunihiro; Hisayoshi Yurimoto

doi:10.1109/IEDM.2001.979566

A low dark current stacked CMOS-APS for charged particle imaging

Isao Takayanagi, Junichi Nakamura, El Sayed Eid, Eric R. Fossum, Kazuhide Nagashima, Takuya Kunihiro, Hisayoshi Yurimoto

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. A twin well pixel with a p-MOS readout transistor achieves low leakage current caused by a hot carrier effect at low temperature as low as 5×10^-8 V/s at the pixel electrode. The total read noise floor of 0.1mVrms was obtained by non-destructive readout CDS with the CDS interval of 21 seconds.

Original language	English
Pages (from-to)	551-554
Number of pages	4
Journal	Technical Digest-International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979566
Publication status	Published - Jan 1 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2001.979566

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abstract = "A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. A twin well pixel with a p-MOS readout transistor achieves low leakage current caused by a hot carrier effect at low temperature as low as 5×10-8 V/s at the pixel electrode. The total read noise floor of 0.1mVrms was obtained by non-destructive readout CDS with the CDS interval of 21 seconds.",

author = "Isao Takayanagi and Junichi Nakamura and Eid, {El Sayed} and Fossum, {Eric R.} and Kazuhide Nagashima and Takuya Kunihiro and Hisayoshi Yurimoto",

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AU - Takayanagi, Isao

AU - Nakamura, Junichi

AU - Eid, El Sayed

AU - Fossum, Eric R.

AU - Nagashima, Kazuhide

AU - Kunihiro, Takuya

AU - Yurimoto, Hisayoshi

PY - 2001/1/1

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AB - A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. A twin well pixel with a p-MOS readout transistor achieves low leakage current caused by a hot carrier effect at low temperature as low as 5×10-8 V/s at the pixel electrode. The total read noise floor of 0.1mVrms was obtained by non-destructive readout CDS with the CDS interval of 21 seconds.

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -

A low dark current stacked CMOS-APS for charged particle imaging

Abstract

ASJC Scopus subject areas

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