A proton pumping gate field-effect transistor for a hydrogen gas sensor

Keiji Tsukada; Tomiharu Yamaguchi; Toshihiko Kiwa

doi:10.1109/JSEN.2007.901268

A proton pumping gate field-effect transistor for a hydrogen gas sensor

Keiji Tsukada, Tomiharu Yamaguchi, Toshihiko Kiwa

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A proton pumping field-effect transistor (FET), consisting of a triple layer gate structure of a Pd/proton conducting polymer/Pt, has been developed. The hydrogen sensitivity was controlled by the bias change between Pt and Pd. Furthermore, two kinds of methods for the readout of DC and AC modulation can be achieved. According to the decrement of the bias frequency, the modulated output was increased. This characteristic realizes a gas sensor with a self-check function.

Original language	English
Pages (from-to)	1268-1269
Number of pages	2
Journal	IEEE Sensors Journal
Volume	7
Issue number	9
DOIs	https://doi.org/10.1109/JSEN.2007.901268
Publication status	Published - Sept 2007

Keywords

Field-effect transistor (FET)
Hydrogen gas sensor
Proton
Self check function

ASJC Scopus subject areas

Instrumentation
Electrical and Electronic Engineering

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10.1109/JSEN.2007.901268

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abstract = "A proton pumping field-effect transistor (FET), consisting of a triple layer gate structure of a Pd/proton conducting polymer/Pt, has been developed. The hydrogen sensitivity was controlled by the bias change between Pt and Pd. Furthermore, two kinds of methods for the readout of DC and AC modulation can be achieved. According to the decrement of the bias frequency, the modulated output was increased. This characteristic realizes a gas sensor with a self-check function.",

keywords = "Field-effect transistor (FET), Hydrogen gas sensor, Proton, Self check function",

author = "Keiji Tsukada and Tomiharu Yamaguchi and Toshihiko Kiwa",

note = "Funding Information: Manuscript received February 16, 2007; revised April 6, 2007; accepted April 6, 2007. This work was supported in part by the New Energy and Industrial Technology Development Organization (NEDO), Japan. The associate editor coordinating the review of this paper and approving it for publication was Prof. Fethi Bedioui.",

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AU - Yamaguchi, Tomiharu

AU - Kiwa, Toshihiko

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N2 - A proton pumping field-effect transistor (FET), consisting of a triple layer gate structure of a Pd/proton conducting polymer/Pt, has been developed. The hydrogen sensitivity was controlled by the bias change between Pt and Pd. Furthermore, two kinds of methods for the readout of DC and AC modulation can be achieved. According to the decrement of the bias frequency, the modulated output was increased. This characteristic realizes a gas sensor with a self-check function.

AB - A proton pumping field-effect transistor (FET), consisting of a triple layer gate structure of a Pd/proton conducting polymer/Pt, has been developed. The hydrogen sensitivity was controlled by the bias change between Pt and Pd. Furthermore, two kinds of methods for the readout of DC and AC modulation can be achieved. According to the decrement of the bias frequency, the modulated output was increased. This characteristic realizes a gas sensor with a self-check function.

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KW - Hydrogen gas sensor

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KW - Self check function

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A proton pumping gate field-effect transistor for a hydrogen gas sensor

Abstract

Keywords

ASJC Scopus subject areas

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