Adsorption and thermal reaction of C                         70                          on Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces: Comparison with C                         60

Takanori Wakita; Kazuyuki Sakamoto; Atsuo Kasuya; Yuichiro Nishina; Shozo Suto

doi:10.1016/S0169-4332(98)00889-7

Adsorption and thermal reaction of C ₇₀ on Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces: Comparison with C ₆₀

Takanori Wakita, Kazuyuki Sakamoto, Atsuo Kasuya, Yuichiro Nishina, Shozo Suto

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report here the measurements of vibrational excitation spectra and the temperature dependence of C ₇₀ molecules adsorbed on Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces using high-resolution electron-energy-loss spectroscopy. It is found that a strong interaction of the C ₇₀ molecule with the Si(100) surface is induced after annealing at 873 K and that the C ₇₀ cage is easier to decompose on that surface. SiC films are formed at 1273 K and 1073 K on the Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces, respectively. Moreover, the formation temperature of 1073 K is lower by 50 K than that of the SiC film from C ₆₀ on a Si(100)-(2 × 1) surface. We discuss the reactivity and the formation temperature of SiC films in terms of the interaction of C ₇₀ with the substrates.

Original language	English
Pages (from-to)	653-656
Number of pages	4
Journal	Applied Surface Science
Volume	144-145
DOIs	https://doi.org/10.1016/S0169-4332(98)00889-7
Publication status	Published - Apr 1999
Externally published	Yes

Keywords

Electron energy loss spectroscopy
Fullerenes
Silicon
Silicon carbide
Vibrations of adsorbed molecules

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(98)00889-7

Cite this

Adsorption and thermal reaction of C ₇₀ on Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces: Comparison with C ₆₀. / Wakita, Takanori; Sakamoto, Kazuyuki; Kasuya, Atsuo et al.
In: Applied Surface Science, Vol. 144-145, 04.1999, p. 653-656.

Research output: Contribution to journal › Article › peer-review

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title = "Adsorption and thermal reaction of C 70 on Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces: Comparison with C 60",

abstract = " We report here the measurements of vibrational excitation spectra and the temperature dependence of C 70 molecules adsorbed on Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces using high-resolution electron-energy-loss spectroscopy. It is found that a strong interaction of the C 70 molecule with the Si(100) surface is induced after annealing at 873 K and that the C 70 cage is easier to decompose on that surface. SiC films are formed at 1273 K and 1073 K on the Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces, respectively. Moreover, the formation temperature of 1073 K is lower by 50 K than that of the SiC film from C 60 on a Si(100)-(2 × 1) surface. We discuss the reactivity and the formation temperature of SiC films in terms of the interaction of C 70 with the substrates.",

keywords = "Electron energy loss spectroscopy, Fullerenes, Silicon, Silicon carbide, Vibrations of adsorbed molecules",

author = "Takanori Wakita and Kazuyuki Sakamoto and Atsuo Kasuya and Yuichiro Nishina and Shozo Suto",

note = "Funding Information: The authors would like to thank Professor Wakio Uchida for valuable discussions. This work was supported in part by Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture and the Kurata Research Grant.",

year = "1999",

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doi = "10.1016/S0169-4332(98)00889-7",

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AU - Wakita, Takanori

AU - Sakamoto, Kazuyuki

AU - Kasuya, Atsuo

AU - Nishina, Yuichiro

AU - Suto, Shozo

N1 - Funding Information: The authors would like to thank Professor Wakio Uchida for valuable discussions. This work was supported in part by Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture and the Kurata Research Grant.

PY - 1999/4

Y1 - 1999/4

N2 - We report here the measurements of vibrational excitation spectra and the temperature dependence of C 70 molecules adsorbed on Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces using high-resolution electron-energy-loss spectroscopy. It is found that a strong interaction of the C 70 molecule with the Si(100) surface is induced after annealing at 873 K and that the C 70 cage is easier to decompose on that surface. SiC films are formed at 1273 K and 1073 K on the Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces, respectively. Moreover, the formation temperature of 1073 K is lower by 50 K than that of the SiC film from C 60 on a Si(100)-(2 × 1) surface. We discuss the reactivity and the formation temperature of SiC films in terms of the interaction of C 70 with the substrates.

AB - We report here the measurements of vibrational excitation spectra and the temperature dependence of C 70 molecules adsorbed on Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces using high-resolution electron-energy-loss spectroscopy. It is found that a strong interaction of the C 70 molecule with the Si(100) surface is induced after annealing at 873 K and that the C 70 cage is easier to decompose on that surface. SiC films are formed at 1273 K and 1073 K on the Si(111)-(7 × 7) and Si(100)-(2 × 1) surfaces, respectively. Moreover, the formation temperature of 1073 K is lower by 50 K than that of the SiC film from C 60 on a Si(100)-(2 × 1) surface. We discuss the reactivity and the formation temperature of SiC films in terms of the interaction of C 70 with the substrates.

KW - Electron energy loss spectroscopy

KW - Fullerenes

KW - Silicon

KW - Silicon carbide

KW - Vibrations of adsorbed molecules

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