Air-assisted high-performance field-effect transistor with thin films of picene

Hideki Okamoto; Naoko Kawasaki; Yumiko Kaji; Yoshihiro Kubozono; Akihiko Fujiwara; Minoru Yamaji

doi:10.1021/ja803291a

Air-assisted high-performance field-effect transistor with thin films of picene

Hideki Okamoto, Naoko Kawasaki, Yumiko Kaji, Yoshihiro Kubozono, Akihiko Fujiwara, Minoru Yamaji

Research output: Contribution to journal › Article › peer-review

222 Citations (Scopus)

Abstract

A field-effect transistor (FET) with thin films of picene has been fabricated on SiO₂ gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, μ, of 1.1 cm² V^-1 s^-1 and the on-off ratio of >10⁵. This excellent device performance was realized under atmospheric conditions. The μ increased with an increase in temperature, and the FET performance was improved by exposure to air or O₂ for a long time. This result implies that this device is an air (O₂)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.

Original language	English
Pages (from-to)	10470-10471
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	130
Issue number	32
DOIs	https://doi.org/10.1021/ja803291a
Publication status	Published - Aug 13 2008

ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

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abstract = "A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, μ, of 1.1 cm2 V-1 s-1 and the on-off ratio of >105. This excellent device performance was realized under atmospheric conditions. The μ increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.",

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AU - Okamoto, Hideki

AU - Kawasaki, Naoko

AU - Kaji, Yumiko

AU - Kubozono, Yoshihiro

AU - Fujiwara, Akihiko

AU - Yamaji, Minoru

PY - 2008/8/13

Y1 - 2008/8/13

N2 - A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, μ, of 1.1 cm2 V-1 s-1 and the on-off ratio of >105. This excellent device performance was realized under atmospheric conditions. The μ increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.

AB - A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, μ, of 1.1 cm2 V-1 s-1 and the on-off ratio of >105. This excellent device performance was realized under atmospheric conditions. The μ increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.

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Air-assisted high-performance field-effect transistor with thin films of picene

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