Analysis of hole transport in cubic phase of p-type GaN by relaxation time approximation

Yasuhiko Hayashi; Tetsuo Soga; Masayoshi Umeno; Takashi Jimbo

doi:10.1016/S0921-4526(99)00280-X

Analysis of hole transport in cubic phase of p-type GaN by relaxation time approximation

Yasuhiko Hayashi, Tetsuo Soga, Masayoshi Umeno, Takashi Jimbo

Research output: Contribution to journal › Conference article › peer-review

Abstract

The theoretical hole transport characteristics of the cubic phase of p-type GaN, that takes the Hall coefficient anisotropy factor of the energy surface for heavy- and light-hole bands into consideration, are investigated over a wide range of temperature using the `relaxation time approximation'. The calculations show that the dominant lattice scattering mechanism for holes is the acoustic deformation potential. We show that Hall factors are very important when we attempt to compare the calculated drift mobility with measured Hall ones.

Original language	English
Pages (from-to)	256-259
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	272
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(99)00280-X
Publication status	Published - Dec 1 1999
Externally published	Yes
Event	Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: Jul 19 1999 → Jul 23 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(99)00280-X

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title = "Analysis of hole transport in cubic phase of p-type GaN by relaxation time approximation",

abstract = "The theoretical hole transport characteristics of the cubic phase of p-type GaN, that takes the Hall coefficient anisotropy factor of the energy surface for heavy- and light-hole bands into consideration, are investigated over a wide range of temperature using the `relaxation time approximation'. The calculations show that the dominant lattice scattering mechanism for holes is the acoustic deformation potential. We show that Hall factors are very important when we attempt to compare the calculated drift mobility with measured Hall ones.",

author = "Yasuhiko Hayashi and Tetsuo Soga and Masayoshi Umeno and Takashi Jimbo",

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T1 - Analysis of hole transport in cubic phase of p-type GaN by relaxation time approximation

AU - Hayashi, Yasuhiko

AU - Soga, Tetsuo

AU - Umeno, Masayoshi

AU - Jimbo, Takashi

PY - 1999/12/1

Y1 - 1999/12/1

N2 - The theoretical hole transport characteristics of the cubic phase of p-type GaN, that takes the Hall coefficient anisotropy factor of the energy surface for heavy- and light-hole bands into consideration, are investigated over a wide range of temperature using the `relaxation time approximation'. The calculations show that the dominant lattice scattering mechanism for holes is the acoustic deformation potential. We show that Hall factors are very important when we attempt to compare the calculated drift mobility with measured Hall ones.

AB - The theoretical hole transport characteristics of the cubic phase of p-type GaN, that takes the Hall coefficient anisotropy factor of the energy surface for heavy- and light-hole bands into consideration, are investigated over a wide range of temperature using the `relaxation time approximation'. The calculations show that the dominant lattice scattering mechanism for holes is the acoustic deformation potential. We show that Hall factors are very important when we attempt to compare the calculated drift mobility with measured Hall ones.

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DO - 10.1016/S0921-4526(99)00280-X

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VL - 272

SP - 256

EP - 259

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)

Y2 - 19 July 1999 through 23 July 1999

ER -

Analysis of hole transport in cubic phase of p-type GaN by relaxation time approximation

Abstract

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