Analysis of response mechanism of a proton-pumping gate FET hydrogen gas sensor in air

T. Yamaguchi, M. Takisawa, T. Kiwa, H. Yamada, K. Tsukada

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Two different types of hydrogen response signals (DC and AC) of a proton-pumping gate FET with triple layer gate structure (Pd/proton conducting polymer/Pt) were obtained. The proton-pumping gate FET showed good selectivity against other gases (CH4, C2H6, NH3, and O2). For practical use, the hydrogen response characteristics of the proton-pumping gate FET were investigated in air (a gaseous mixture of oxygen and nitrogen). The proton-pumping gate FET showed different hydrogen response characteristics in nitrogen as well as in air, despite the lack of oxygen interference independently. To clarify the response mechanism of the proton-pumping gate FET, a hydrogen response measurement was performed, using a gas flow system and electrochemical impedance spectroscopy. Consequently, the difference in response between nitrogen and air was found to be due to the hydrogen dissociation reaction and the interference with the proton transfer caused by the adsorbed oxygen on the upper Pd gate electrode.

Original languageEnglish
Pages (from-to)538-542
Number of pages5
JournalSensors and Actuators, B: Chemical
Issue number2
Publication statusPublished - Aug 12 2008


  • Electrochemical impedance spectroscopy (EIS)
  • Field effect transistor (FET)
  • Hydrogen sensor
  • Oxygen
  • Proton-pumping gate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


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