Abstract
Two different types of hydrogen response signals (DC and AC) of a proton-pumping gate FET with triple layer gate structure (Pd/proton conducting polymer/Pt) were obtained. The proton-pumping gate FET showed good selectivity against other gases (CH4, C2H6, NH3, and O2). For practical use, the hydrogen response characteristics of the proton-pumping gate FET were investigated in air (a gaseous mixture of oxygen and nitrogen). The proton-pumping gate FET showed different hydrogen response characteristics in nitrogen as well as in air, despite the lack of oxygen interference independently. To clarify the response mechanism of the proton-pumping gate FET, a hydrogen response measurement was performed, using a gas flow system and electrochemical impedance spectroscopy. Consequently, the difference in response between nitrogen and air was found to be due to the hydrogen dissociation reaction and the interference with the proton transfer caused by the adsorbed oxygen on the upper Pd gate electrode.
Original language | English |
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Pages (from-to) | 538-542 |
Number of pages | 5 |
Journal | Sensors and Actuators, B: Chemical |
Volume | 133 |
Issue number | 2 |
DOIs | |
Publication status | Published - Aug 12 2008 |
Keywords
- Electrochemical impedance spectroscopy (EIS)
- Field effect transistor (FET)
- Hydrogen sensor
- Oxygen
- Proton-pumping gate
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry