Angle-resolved photoemission spectroscopy for VO2 thin films grown on TiO2 (0 0 1) substrates

Y. Muraoka, K. Saeki, Y. Yao, T. Wakita, M. Hirai, T. Yokoya, R. Eguchi, S. Shin

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We present the results of angle-resolved photoemission spectroscopy (ARPES) measurements of metallic VO2 thin films. The VO2 thin films have been grown on TiO2 (0 0 1) single crystal substrates using pulsed laser deposition. The films exhibit a first-order metal-insulator transition (MIT) at 305 K. In the ARPES spectra of the metallic phase for the films, the O 2p band shows highly dispersive feature in the binding energy range of 3-8 eV along the Γ-Z direction. The periodicity of the dispersive band is found to be 2.2Å-1 which is almost identical with the periodicity expected from the c-axis length of the VO2 thin films. The overall feature of the experimental band structure is similar to the band structure calculations, supporting that we have succeeded in observing the dispersive band of the O 2p state in the metallic VO2 thin film. The present work indicates that the ARPES measurements using epitaxial thin films are promising for determining the band structure of VO2.

Original languageEnglish
Pages (from-to)249-251
Number of pages3
JournalJournal of Electron Spectroscopy and Related Phenomena
Issue number2-3
Publication statusPublished - Aug 2010


  • Thin film
  • VO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry


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