Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence

Takanori Wakita; Hiroyuki Okazaki; Yoshihiko Takano; Masaaki Hirai; Yuji Muraoka; Takayoshi Yokoya

doi:10.1016/j.physc.2009.11.028

Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence

Takanori Wakita, Hiroyuki Okazaki, Yoshihiko Takano, Masaaki Hirai, Yuji Muraoka, Takayoshi Yokoya

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The boron concentration dependence of the Si electronic structure of Si(1 0 0)2 × 1 surfaces were investigated by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts toward lower binding energy as the boron concentration increases. The band dispersion was obtained from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level even with a boron concentration 35 times larger than the critical concentration of the metal-insulator transition.

Original language	English
Pages (from-to)	S641-S643
Journal	Physica C: Superconductivity and its applications
Volume	470
Issue number	SUPPL.1
DOIs	https://doi.org/10.1016/j.physc.2009.11.028
Publication status	Published - Dec 2010

Keywords

Elemental semiconductor
Metal-insulator transitions
Photoemission spectroscopy
Silicon superconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/j.physc.2009.11.028

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title = "Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence",

abstract = "The boron concentration dependence of the Si electronic structure of Si(1 0 0)2 × 1 surfaces were investigated by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts toward lower binding energy as the boron concentration increases. The band dispersion was obtained from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level even with a boron concentration 35 times larger than the critical concentration of the metal-insulator transition.",

keywords = "Elemental semiconductor, Metal-insulator transitions, Photoemission spectroscopy, Silicon superconductor",

author = "Takanori Wakita and Hiroyuki Okazaki and Yoshihiko Takano and Masaaki Hirai and Yuji Muraoka and Takayoshi Yokoya",

note = "Funding Information: This work was supported partially by a Grant-in-Aid for Scientific Research of the Ministry of Education, Culture, Sports, Science and Technology, Japan.",

year = "2010",

month = dec,

doi = "10.1016/j.physc.2009.11.028",

language = "English",

volume = "470",

pages = "S641--S643",

journal = "Physica C: Superconductivity and its applications",

issn = "0921-4534",

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}

TY - JOUR

T1 - Angle-resolved photoemission study of Si electronic structure

T2 - Boron concentration dependence

AU - Wakita, Takanori

AU - Okazaki, Hiroyuki

AU - Takano, Yoshihiko

AU - Hirai, Masaaki

AU - Muraoka, Yuji

AU - Yokoya, Takayoshi

N1 - Funding Information: This work was supported partially by a Grant-in-Aid for Scientific Research of the Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2010/12

Y1 - 2010/12

N2 - The boron concentration dependence of the Si electronic structure of Si(1 0 0)2 × 1 surfaces were investigated by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts toward lower binding energy as the boron concentration increases. The band dispersion was obtained from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level even with a boron concentration 35 times larger than the critical concentration of the metal-insulator transition.

AB - The boron concentration dependence of the Si electronic structure of Si(1 0 0)2 × 1 surfaces were investigated by angle-resolved photoemission spectroscopy (ARPES). The ARPES spectra exhibit rigid shifts toward lower binding energy as the boron concentration increases. The band dispersion was obtained from fitting procedure, and it is found that the top of the valence band does not exceed the Fermi level even with a boron concentration 35 times larger than the critical concentration of the metal-insulator transition.

KW - Elemental semiconductor

KW - Metal-insulator transitions

KW - Photoemission spectroscopy

KW - Silicon superconductor

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DO - 10.1016/j.physc.2009.11.028

M3 - Article

AN - SCOPUS:78649694216

SN - 0921-4534

VL - 470

SP - S641-S643

JO - Physica C: Superconductivity and its applications

JF - Physica C: Superconductivity and its applications

IS - SUPPL.1

ER -

Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence

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Keywords

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