Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence

Engineering & Materials Science

• Photoemission 100%
• Electronic structure 82%
• Photoelectron spectroscopy 63%
• Boron 63%
• Metal insulator transition 34%
• Valence bands 33%
• Fermi level 32%
• Binding energy 29%

Chemical Compounds

• Photoemission 67%
• Boron Atom 48%
• Electronic State 40%
• Metal Insulator Transition 26%
• Fermi Level 21%
• Valence Band 20%
• Ethane 16%
• Binding Energy 16%
• Time 6%
• Surface 5%

Physics & Astronomy

• photoelectric emission 48%
• boron 47%
• electronic structure 41%
• spectroscopy 14%
• binding energy 11%
• insulators 10%
• valence 10%
• shift 8%
• metals 7%