Abstract
We have studied the effects of carbon on the annihilation kinetics of the first six species of thermal donor (TD) family (TD-1 through TD-6) in Czochralski Si by means of low-temperature infrared absorption spectroscopy. After the formation of TDs in the temperature range of 450-480°C, prolonged annealing at the same temperature caused those TDs to disappear simultaneously. In C-rich crystals, TDs were annihilated by an order faster than in C-lean ones. The annihilation kinetics was first order, and the activation energy was about 2eV regardless of the species of TD. Possible mechanisms of this carbon-enhanced annihilation are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 1321-1326 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 196-201 |
| Issue number | pt 3 |
| DOIs | |
| Publication status | Published - 1995 |
| Event | Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: Jul 23 1995 → Jul 28 1995 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering