TY - JOUR
T1 - ANOMALOUS RESISTIVITY CHANGE OF AG-AL ALLOYS ON ANNEALING IN OXYGEN.
AU - Yoshida, Nobuyuki
AU - Tomii, Yoichi
AU - Takada, Jun
AU - Kikuchi, Shiomi
AU - Koiwa, Masahiro
PY - 1988
Y1 - 1988
N2 - Ag-2. 2 at. percent Al specimens were internally oxidized at 773 K and 1173 K. At 1173 K, the resistivity decreases rapidly and attains a steady state value after 3. 6 ks. In contrast, the resistivity gradually increases on annealing at 773 K, and attains a gradually increases on annealing at 773 K, and attains a steady state value at some 100 ks. The increase in resistivity on low temperature oxidation and the decrease on high temperature oxidation is a common trend for specimens with different Al contents. One possible explanation for the resistivity increase is the formation of a small sized dispersion due to lower solute mobility at lower temperatures. 5 Refs.
AB - Ag-2. 2 at. percent Al specimens were internally oxidized at 773 K and 1173 K. At 1173 K, the resistivity decreases rapidly and attains a steady state value after 3. 6 ks. In contrast, the resistivity gradually increases on annealing at 773 K, and attains a gradually increases on annealing at 773 K, and attains a steady state value at some 100 ks. The increase in resistivity on low temperature oxidation and the decrease on high temperature oxidation is a common trend for specimens with different Al contents. One possible explanation for the resistivity increase is the formation of a small sized dispersion due to lower solute mobility at lower temperatures. 5 Refs.
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U2 - 10.2320/matertrans1960.29.693
DO - 10.2320/matertrans1960.29.693
M3 - Article
AN - SCOPUS:0024063896
SN - 0021-4434
VL - 29
SP - 693
EP - 694
JO - Transactions of the Japan Institute of Metals
JF - Transactions of the Japan Institute of Metals
IS - 8
ER -