TY - JOUR
T1 - Auger-electron-spectroscopy (AES) measurements on anodically oxidized layers of single-crystal GaP
AU - Okada, Akira
AU - Ohnuki, Yasuhide
AU - Inada, Taroh
PY - 1978
Y1 - 1978
N2 - Anodically oxidized layers were grown on GaP (111) surfaces from a solution of N-methyl acetamide, H2O, NH4OH, and citric acid having a pH value of 9.0. The layer growth rate was 11 Å/V with a constant current density of 0.5 mA/cm2. Auger electron spectra and depth profiles of the components were measured. The phosphorous L3M 2,3M2,3 transition at 117 eV suffered a chemical shift in the oxide layers, and the shape of the first derivative of the Auger signal was completely different from that observed with P in GaP. Observation of the phosphorous K L2,3L2,3 transition at 1858 eV indicated that the ratio of P/Ga had a constant value throughout the oxide layers. Only the oxygen concentrations varied along with the depth.
AB - Anodically oxidized layers were grown on GaP (111) surfaces from a solution of N-methyl acetamide, H2O, NH4OH, and citric acid having a pH value of 9.0. The layer growth rate was 11 Å/V with a constant current density of 0.5 mA/cm2. Auger electron spectra and depth profiles of the components were measured. The phosphorous L3M 2,3M2,3 transition at 117 eV suffered a chemical shift in the oxide layers, and the shape of the first derivative of the Auger signal was completely different from that observed with P in GaP. Observation of the phosphorous K L2,3L2,3 transition at 1858 eV indicated that the ratio of P/Ga had a constant value throughout the oxide layers. Only the oxygen concentrations varied along with the depth.
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U2 - 10.1063/1.90373
DO - 10.1063/1.90373
M3 - Article
AN - SCOPUS:0001248582
SN - 0003-6951
VL - 33
SP - 447
EP - 449
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 5
ER -