Boron-incorporated amorphous carbon films deposited by pulsed laser deposition

Xuemin Tian; Mohamad Rusop; Yasuhiko Hayashi; Tetsuo Soga; Takashi Jimbo; Masayoshi Umeno

doi:10.1143/jjap.41.l970

Boron-incorporated amorphous carbon films deposited by pulsed laser deposition

Xuemin Tian, Mohamad Rusop, Yasuhiko Hayashi, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Boron-incorporated carbon films (a-C(B)) were deposited on a silicon substrate by pulsed laser deposition (PLD) of a graphite target at room temperature. The boron content was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 at.% in the films. These films were confirmed to be p-type due to the formation of a heterojunction between the a-C(B) carbon film and silicon substrate. The devices of C(B)/n-Si configuration show a maximum [open-circuit voltage] V_oc = 0.25 V, and [short-circuit current density] J_sc = 2.1 mA/cm² under illumination (AM 1.5, 100 mW/cm²).

Original language	English
Pages (from-to)	L970-L973
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	9 A/B
DOIs	https://doi.org/10.1143/jjap.41.l970
Publication status	Published - Sept 15 2002
Externally published	Yes

Keywords

Amorphous
Boron-incorporated
Heterojunction
Photovoltaic

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1143/jjap.41.l970

Cite this

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title = "Boron-incorporated amorphous carbon films deposited by pulsed laser deposition",

abstract = "Boron-incorporated carbon films (a-C(B)) were deposited on a silicon substrate by pulsed laser deposition (PLD) of a graphite target at room temperature. The boron content was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 at.% in the films. These films were confirmed to be p-type due to the formation of a heterojunction between the a-C(B) carbon film and silicon substrate. The devices of C(B)/n-Si configuration show a maximum [open-circuit voltage] Voc = 0.25 V, and [short-circuit current density] Jsc = 2.1 mA/cm2 under illumination (AM 1.5, 100 mW/cm2).",

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author = "Xuemin Tian and Mohamad Rusop and Yasuhiko Hayashi and Tetsuo Soga and Takashi Jimbo and Masayoshi Umeno",

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T1 - Boron-incorporated amorphous carbon films deposited by pulsed laser deposition

AU - Tian, Xuemin

AU - Rusop, Mohamad

AU - Hayashi, Yasuhiko

AU - Soga, Tetsuo

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 2002/9/15

Y1 - 2002/9/15

N2 - Boron-incorporated carbon films (a-C(B)) were deposited on a silicon substrate by pulsed laser deposition (PLD) of a graphite target at room temperature. The boron content was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 at.% in the films. These films were confirmed to be p-type due to the formation of a heterojunction between the a-C(B) carbon film and silicon substrate. The devices of C(B)/n-Si configuration show a maximum [open-circuit voltage] Voc = 0.25 V, and [short-circuit current density] Jsc = 2.1 mA/cm2 under illumination (AM 1.5, 100 mW/cm2).

AB - Boron-incorporated carbon films (a-C(B)) were deposited on a silicon substrate by pulsed laser deposition (PLD) of a graphite target at room temperature. The boron content was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 at.% in the films. These films were confirmed to be p-type due to the formation of a heterojunction between the a-C(B) carbon film and silicon substrate. The devices of C(B)/n-Si configuration show a maximum [open-circuit voltage] Voc = 0.25 V, and [short-circuit current density] Jsc = 2.1 mA/cm2 under illumination (AM 1.5, 100 mW/cm2).

KW - Amorphous

KW - Boron-incorporated

KW - Heterojunction

KW - Photovoltaic

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JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

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Boron-incorporated amorphous carbon films deposited by pulsed laser deposition

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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