Change of the Fermi surface across the critical pressure in CeIn 3: The de Haas-van Alphen study under pressure

Rikio Settai, Tetsuo Kubo, Tomoyuki Shiromoto, Daisuke Honda, Hiroaki Shishido, Kiyohiro Sugiyama, Yoshinori Haga, Tatsuma D. Matsuda, Kiyoshi Betsuyaku, Hisatomo Harima, Tatsuo C. Kobayashi, Yoshichika Onuki

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)

Abstract

We have studied a change of the Fermi surface in an antiferromagnet CeIn3 via the de Haas-van Alphen experiment under pressure up to 3 GPa. With increasing pressure P, the Néel temperature TN = 10 K decreases and becomes zero at a critical pressure Pc ≃ 2.6 GPa. In the pressure region P > Pc, we have observed a large main Fermi surface named a, which indicates that the electronic state of 4f electron in CeIn3 changes from localized to itinerant at Pc, as observed in the similar antiferromagnets CeRh2Si2 and CeRhIn5. The cyclotron effective mass mc* of this main Fermi surface is extremely enhanced around Pc: m c* ≃ 60m0 at 2.7 GPa for the magnetic field along the 〈100〉 direction.

Original languageEnglish
Pages (from-to)3016-3026
Number of pages11
JournalJournal of the Physical Society of Japan
Volume74
Issue number11
DOIs
Publication statusPublished - Nov 1 2005

Keywords

  • CeIn
  • De Haas-van Alphen effect
  • Fermi surface
  • Heavy fermion
  • Pressure

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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