Field-effect transistors (FETs) with solid gate dielectrics are fabricated with thin films of the one-dimensional (1D) extended hydrocarbon phenacene, which contains seven benzene rings. p-channel FET characteristics are observed for these FETs, with a mobility of 0.75cm2 V-1 s -1 at 100 Torr of O2. The O2 gas-sensing effect is examined for the phenacene FET and for the 1D hydrocarbon picene FET. These FETs' trap density and contact resistance are investigated with the multiple shallow trap and release model and the transfer line method. Unlike picene FETs, phenacene FETs have few charge traps and are therefore air-stable.
|Journal||Applied Physics Letters|
|Publication status||Published - Jan 3 2011|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)