Characteristics of titanium oxide films deposited by an activated reactive evaporation method

Tatsuo Fujii, Naoki Sakata, Jun Takada, Yoshinari Miura, Yoshihiro Daitoh, Mikio Takano

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69 Citations (Scopus)


Titanium di- and sesquioxide films were epitaxially grown on the (001) surface of sapphire single-crystalline substrates by an activated reactive evaporation method. Formation range for each titanium oxide was determined as a function of oxygen pressure (Po2) by means of x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Films prepared at Po^.OX 10 4 Torr were stoichiometric (lOO)-oriented rutile of Ti02, and with decreasing Po2 they would accommodate more and more Ti3+ ions in the rutile structure. At P02 = 0.6 X 10~4 Torr, on the other hand, (OOl)-oriented Ti203 was formed and an electrical transition was clearly detected at about 400 K. However, the large lattice mismatch between the substrate and these films leads to a periodic introduction of misfit dislocations in the case of the Ti02 films and a mixing of stacking sequences for the Ti203 films.

Original languageEnglish
Pages (from-to)1468-1473
Number of pages6
JournalJournal of Materials Research
Issue number6
Publication statusPublished - Jun 1994

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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