Characteristics of Vertical Ga2O3Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film

Venkata Krishna Rao Rama, Ajinkya K. Ranade, Pradeep Desai, Bhagyashri Todankar, Golap Kalita, Hiroo Suzuki, Masaki Tanemura, Yasuhiko Hayashi

Research output: Contribution to journalArticlepeer-review


We present the device properties of a nickel (Ni)-gallium oxide (Ga2O3) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/Ga2O3/In was created using a chemical vapor-deposited hBN film on a Ga2O3 substrate. The current-voltage characteristics of the Schottky junction were investigated with and without the hBN interfacial layer. We observed that the turn-on voltage for the forward current of the Schottky junction was significantly enhanced with the hBN interfacial film. Furthermore, the Schottky junction was analyzed under the illumination of deep ultraviolet light (254 nm), obtaining a photoresponsivity of 95.11 mA/W under an applied bias voltage (-7.2 V). The hBN interfacial layer for the Ga2O3-based Schottky junction can serve as a barrier layer to control the turn-on voltage and optimize the device properties for deep-UV photosensor applications. Furthermore, the demonstrated vertical heterojunction with an hBN layer has the potential to be significant for temperature management at the junction interface to develop reliable Ga2O3-based Schottky junction devices.

Original languageEnglish
Pages (from-to)26021-26028
Number of pages8
JournalACS Omega
Issue number30
Publication statusPublished - Aug 2 2022

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)


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