TY - JOUR
T1 - Characteristics of Vertical Ga2O3Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film
AU - Rama, Venkata Krishna Rao
AU - Ranade, Ajinkya K.
AU - Desai, Pradeep
AU - Todankar, Bhagyashri
AU - Kalita, Golap
AU - Suzuki, Hiroo
AU - Tanemura, Masaki
AU - Hayashi, Yasuhiko
N1 - Publisher Copyright:
© 2022 American Chemical Society.
PY - 2022/8/2
Y1 - 2022/8/2
N2 - We present the device properties of a nickel (Ni)-gallium oxide (Ga2O3) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/Ga2O3/In was created using a chemical vapor-deposited hBN film on a Ga2O3 substrate. The current-voltage characteristics of the Schottky junction were investigated with and without the hBN interfacial layer. We observed that the turn-on voltage for the forward current of the Schottky junction was significantly enhanced with the hBN interfacial film. Furthermore, the Schottky junction was analyzed under the illumination of deep ultraviolet light (254 nm), obtaining a photoresponsivity of 95.11 mA/W under an applied bias voltage (-7.2 V). The hBN interfacial layer for the Ga2O3-based Schottky junction can serve as a barrier layer to control the turn-on voltage and optimize the device properties for deep-UV photosensor applications. Furthermore, the demonstrated vertical heterojunction with an hBN layer has the potential to be significant for temperature management at the junction interface to develop reliable Ga2O3-based Schottky junction devices.
AB - We present the device properties of a nickel (Ni)-gallium oxide (Ga2O3) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/Ga2O3/In was created using a chemical vapor-deposited hBN film on a Ga2O3 substrate. The current-voltage characteristics of the Schottky junction were investigated with and without the hBN interfacial layer. We observed that the turn-on voltage for the forward current of the Schottky junction was significantly enhanced with the hBN interfacial film. Furthermore, the Schottky junction was analyzed under the illumination of deep ultraviolet light (254 nm), obtaining a photoresponsivity of 95.11 mA/W under an applied bias voltage (-7.2 V). The hBN interfacial layer for the Ga2O3-based Schottky junction can serve as a barrier layer to control the turn-on voltage and optimize the device properties for deep-UV photosensor applications. Furthermore, the demonstrated vertical heterojunction with an hBN layer has the potential to be significant for temperature management at the junction interface to develop reliable Ga2O3-based Schottky junction devices.
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U2 - 10.1021/acsomega.2c00506
DO - 10.1021/acsomega.2c00506
M3 - Article
AN - SCOPUS:85135905323
SN - 2470-1343
VL - 7
SP - 26021
EP - 26028
JO - ACS Omega
JF - ACS Omega
IS - 30
ER -