Characterization and ferroelectricity of Bi and Fe co-doped PZT films

J. S. Cross; K. Shinozaki; T. Yoshioka; J. Tanaka; S. H. Kim; H. Morioka; K. Saito

doi:10.1016/j.mseb.2010.02.005

Characterization and ferroelectricity of Bi and Fe co-doped PZT films

J. S. Cross, K. Shinozaki, T. Yoshioka, J. Tanaka, S. H. Kim, H. Morioka, K. Saito

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Co-doping of thin Pb(Zr,Ti)O₃ (PZT) films with Bi and Fe to optimize the ferroelectric properties has recently gained attention particularly, for ferroelectric random access memory applications (FeRAM). This study was undertaken to understand how co-doping PZT with one atomic% Bi and Fe impacts the characteristics of capacitor ferroelectric and material properties. XRD patterns of PZT-BiFeO₃ (BF) and PZT 150 nm thick showed strong (1 1 1) orientation and changing the sample stage angle Chi to 50° revealed multiple PZT and PZT-BF diffractions peaks. Bi and Fe co-doping of PZT results in a 0.01 decrease in lattice dimensions which indicates that Bi and Fe are substituting into the PZT lattice. Polarization hysteresis loops show similar characteristics but pulse measured polarization values were higher for PZT-BF than PZT which indicates PZT-BF has potential for thin film ferroelectric devices.

Original language	English
Pages (from-to)	18-20
Number of pages	3
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	173
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2010.02.005
Publication status	Published - 2010
Externally published	Yes

Keywords

Doping effects
Ferroelectric
Films
Oxides
PZT
Polarization

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2010.02.005

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title = "Characterization and ferroelectricity of Bi and Fe co-doped PZT films",

abstract = "Co-doping of thin Pb(Zr,Ti)O3 (PZT) films with Bi and Fe to optimize the ferroelectric properties has recently gained attention particularly, for ferroelectric random access memory applications (FeRAM). This study was undertaken to understand how co-doping PZT with one atomic% Bi and Fe impacts the characteristics of capacitor ferroelectric and material properties. XRD patterns of PZT-BiFeO3 (BF) and PZT 150 nm thick showed strong (1 1 1) orientation and changing the sample stage angle Chi to 50° revealed multiple PZT and PZT-BF diffractions peaks. Bi and Fe co-doping of PZT results in a 0.01 decrease in lattice dimensions which indicates that Bi and Fe are substituting into the PZT lattice. Polarization hysteresis loops show similar characteristics but pulse measured polarization values were higher for PZT-BF than PZT which indicates PZT-BF has potential for thin film ferroelectric devices.",

keywords = "Doping effects, Ferroelectric, Films, Oxides, PZT, Polarization",

author = "Cross, {J. S.} and K. Shinozaki and T. Yoshioka and J. Tanaka and Kim, {S. H.} and H. Morioka and K. Saito",

year = "2010",

doi = "10.1016/j.mseb.2010.02.005",

language = "English",

volume = "173",

pages = "18--20",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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T1 - Characterization and ferroelectricity of Bi and Fe co-doped PZT films

AU - Cross, J. S.

AU - Shinozaki, K.

AU - Yoshioka, T.

AU - Tanaka, J.

AU - Kim, S. H.

AU - Morioka, H.

AU - Saito, K.

PY - 2010

Y1 - 2010

N2 - Co-doping of thin Pb(Zr,Ti)O3 (PZT) films with Bi and Fe to optimize the ferroelectric properties has recently gained attention particularly, for ferroelectric random access memory applications (FeRAM). This study was undertaken to understand how co-doping PZT with one atomic% Bi and Fe impacts the characteristics of capacitor ferroelectric and material properties. XRD patterns of PZT-BiFeO3 (BF) and PZT 150 nm thick showed strong (1 1 1) orientation and changing the sample stage angle Chi to 50° revealed multiple PZT and PZT-BF diffractions peaks. Bi and Fe co-doping of PZT results in a 0.01 decrease in lattice dimensions which indicates that Bi and Fe are substituting into the PZT lattice. Polarization hysteresis loops show similar characteristics but pulse measured polarization values were higher for PZT-BF than PZT which indicates PZT-BF has potential for thin film ferroelectric devices.

AB - Co-doping of thin Pb(Zr,Ti)O3 (PZT) films with Bi and Fe to optimize the ferroelectric properties has recently gained attention particularly, for ferroelectric random access memory applications (FeRAM). This study was undertaken to understand how co-doping PZT with one atomic% Bi and Fe impacts the characteristics of capacitor ferroelectric and material properties. XRD patterns of PZT-BiFeO3 (BF) and PZT 150 nm thick showed strong (1 1 1) orientation and changing the sample stage angle Chi to 50° revealed multiple PZT and PZT-BF diffractions peaks. Bi and Fe co-doping of PZT results in a 0.01 decrease in lattice dimensions which indicates that Bi and Fe are substituting into the PZT lattice. Polarization hysteresis loops show similar characteristics but pulse measured polarization values were higher for PZT-BF than PZT which indicates PZT-BF has potential for thin film ferroelectric devices.

KW - Doping effects

KW - Ferroelectric

KW - Films

KW - Oxides

KW - PZT

KW - Polarization

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JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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ER -

Characterization and ferroelectricity of Bi and Fe co-doped PZT films

Abstract

Keywords

ASJC Scopus subject areas

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