Abstract
Pure cubic zirconia (c-ZrO2) is unstable at room temperature. We achieved the epitaxial formation of c-ZrO2 crystalline surface oxide islands on ZrB2(0001) by annealing the substrate without sample cleaning at 950°C under ultrahigh-vacuum conditions. The interface structure at the c-ZrO2 islands and the ZrB2(0001) substrate was investigated using element-specific circularly-polarized-light photoelectron diffraction, angle-resolved X-ray photoelectron spectroscopy, and reflection high-energy electron diffraction (RHEED). The ZrO2(111) islands was a twin crystal oriented in ZrO2[110]//ZrB2[2110], and was stable up to around 1500°C. The Zr-Zr distance of ZrB2 bulk and that of ZrO2(111) agree with at the ratio of 8 to 7.
Original language | English |
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Pages (from-to) | 111-114 |
Number of pages | 4 |
Journal | e-Journal of Surface Science and Nanotechnology |
Volume | 13 |
DOIs | |
Publication status | Published - 2015 |
Externally published | Yes |
Keywords
- Epitaxial surface oxide
- Photoelectron diffraction
- Reflection high-energy electron diffraction (RHEED)
- Soft X-ray photoelectron spectroscopy
- Surface structure
- ZrB
- c-ZrO
ASJC Scopus subject areas
- Biotechnology
- Bioengineering
- Condensed Matter Physics
- Mechanics of Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films