Direct observation of second-harmonic generation from crystalline particles in Ge-doped SiO2 glass films

T. Fujiwara; T. Sawada; Y. Benino; T. Komatsu; M. Takahashi; T. Yoko; J. Nishii

doi:10.1364/OE.11.001598

Direct observation of second-harmonic generation from crystalline particles in Ge-doped SiO₂ glass films

T. Fujiwara, T. Sawada, Y. Benino, T. Komatsu, M. Takahashi, T. Yoko, J. Nishii

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The authors report what is, to our best knowledge, the first observation of second-harmonic generation (SHG) directly from the crystalline particles in Ge-doped SiO₂ (Ge:SiO₂) glass films. Ge:SiO₂ glass films with approximately 5 μm thickness were fabricated by chemical vapor-phase deposition. X-ray diffraction (XRD) peaks at around 2θ=22° in thermally crystallized Ge:SiO₂ films were observed, and obtained XRD patterns are exactly the same as those in ultraviolet-laser-poled Ge:SiO₂ glasses. Using SHG microscopic technique with a Nd:YAG laser, it has been successfully found that SH emitting with 532 nm wavelength is observed directly from the crystalline particles induced in the crystallized films.

Original language	English
Pages (from-to)	1598-1606
Number of pages	9
Journal	Optics Express
Volume	11
Issue number	14
DOIs	https://doi.org/10.1364/OE.11.001598
Publication status	Published - Jul 2003
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Direct observation of second-harmonic generation from crystalline particles in Ge-doped SiO2 glass films",

abstract = "The authors report what is, to our best knowledge, the first observation of second-harmonic generation (SHG) directly from the crystalline particles in Ge-doped SiO2 (Ge:SiO2) glass films. Ge:SiO2 glass films with approximately 5 μm thickness were fabricated by chemical vapor-phase deposition. X-ray diffraction (XRD) peaks at around 2θ=22° in thermally crystallized Ge:SiO2 films were observed, and obtained XRD patterns are exactly the same as those in ultraviolet-laser-poled Ge:SiO2 glasses. Using SHG microscopic technique with a Nd:YAG laser, it has been successfully found that SH emitting with 532 nm wavelength is observed directly from the crystalline particles induced in the crystallized films.",

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T1 - Direct observation of second-harmonic generation from crystalline particles in Ge-doped SiO2 glass films

AU - Fujiwara, T.

AU - Sawada, T.

AU - Benino, Y.

AU - Komatsu, T.

AU - Takahashi, M.

AU - Yoko, T.

AU - Nishii, J.

PY - 2003/7

Y1 - 2003/7

N2 - The authors report what is, to our best knowledge, the first observation of second-harmonic generation (SHG) directly from the crystalline particles in Ge-doped SiO2 (Ge:SiO2) glass films. Ge:SiO2 glass films with approximately 5 μm thickness were fabricated by chemical vapor-phase deposition. X-ray diffraction (XRD) peaks at around 2θ=22° in thermally crystallized Ge:SiO2 films were observed, and obtained XRD patterns are exactly the same as those in ultraviolet-laser-poled Ge:SiO2 glasses. Using SHG microscopic technique with a Nd:YAG laser, it has been successfully found that SH emitting with 532 nm wavelength is observed directly from the crystalline particles induced in the crystallized films.

AB - The authors report what is, to our best knowledge, the first observation of second-harmonic generation (SHG) directly from the crystalline particles in Ge-doped SiO2 (Ge:SiO2) glass films. Ge:SiO2 glass films with approximately 5 μm thickness were fabricated by chemical vapor-phase deposition. X-ray diffraction (XRD) peaks at around 2θ=22° in thermally crystallized Ge:SiO2 films were observed, and obtained XRD patterns are exactly the same as those in ultraviolet-laser-poled Ge:SiO2 glasses. Using SHG microscopic technique with a Nd:YAG laser, it has been successfully found that SH emitting with 532 nm wavelength is observed directly from the crystalline particles induced in the crystallized films.

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Direct observation of second-harmonic generation from crystalline particles in Ge-doped SiO₂ glass films

Abstract

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