Drastic change of the electronic states at the quantum critical point in heavy fermions

R. Settai, H. Shishido, T. Kubo, S. Araki, T. C. Kobayashi, H. Harima, Y. Onuki

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We studied the change of the Fermi surface properties in antiferromagnets CeIn3 and CeRhIn5 via the dHvA experiments under pressure. We found the abrupt change of the Fermi surface at the critical pressure Pc, where the magnetic ordering state changes to the paramagnetic one. The change of the Fermi surface indicates that the 4f-electron character is changed from localized to itinerant in CeIn3 and CeRhIn5 at Pc. Namely, the 4f-electron contributes to the volume of the Fermi surface above Pc. Interestingly, the pressure-induced heavy fermion state with large effective mass was observed around Pc, where the pressure-induced superconductivity appears. We also discuss the Fermi surface properties in the system without inversion symmetry in the crystal structure as in CePt3 Si and CeTX3 (T:Co, Ir, Rh, X:Si, Ge). The spin-orbit interaction due to the lack of inversion symmetry brings about a splitting of the Fermi surface, which is important for considering the formation of Cooper pair.

Original languageEnglish
Pages (from-to)541-547
Number of pages7
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 1
DOIs
Publication statusPublished - Mar 2007

Keywords

  • CeCoGe
  • CeIn
  • CeIrSI
  • CePt Si
  • CeRhIn
  • Fermi surface
  • Heavy fermion state
  • Non-centrosymmetric superconductor
  • de Haas-van Alphen effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Drastic change of the electronic states at the quantum critical point in heavy fermions'. Together they form a unique fingerprint.

Cite this