Dual gate FET hydrogen gas sensor

K. Tsukada, M. Kariya, T. Yamaguchi, T. Kiwa, H. Yamada, T. Maehara, T. Yamamoto, S. Kunitsugu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


We developed a dual gate FET hydrogen gas sensor for application to hydrogen vehicles. The dual gate FET hydrogen sensor was integrated with Pt-gate FET to detect hydrogen and Ti-gate FET as the reference sensor in the same Si chip. Ti-gate FET has the same structure as Pt-FET except for the gate metal. The Pt-FET showed good response to hydrogen gas above 10 ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the range of room temperature to 80° C because of the same temperature dependence of the I-V characteristic.

Original languageEnglish
Title of host publicationIEEE Sensors 2009 Conference - SENSORS 2009
Number of pages3
Publication statusPublished - 2009
EventIEEE Sensors 2009 Conference - SENSORS 2009 - Christchurch, New Zealand
Duration: Oct 25 2009Oct 28 2009

Publication series

NameProceedings of IEEE Sensors


OtherIEEE Sensors 2009 Conference - SENSORS 2009
Country/TerritoryNew Zealand

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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