Dual-Gate field-effect transistor hydrogen gas sensor with thermal compensation

Keiji Tsukada, Masatoshi Kariya, Tomiharu Yamaguchi, Toshihiko Kiwa, Hironobu Yamada, Tsuneyoshi Maehara, Tadayoshi Yamamoto, Shinsuke Kunitsugu

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


We developed a dual-gate field-effect transistor (FET) hydrogen gas sensor for application to hydrogen vehicles. The dual-gate FET hydrogen sensor was integrated with a Pt-gate FET to detect hydrogen and a Ti-gate FET as the reference sensor in the same Si chip. The Ti-FET had the same structure as the Pt-FET except for the gate metal. The Pt-FET showed a good response to hydrogen gas above 10ppm in air, while the Ti-FET did not show any response to hydrogen gas. The differential output voltage between the Pt-FET and the Ti-FET was stable in the temperature range from room temperature to 80 °C because of the same temperature dependence of the current-voltage (I-V) characteristics. In addition, the temperature of the integrated hydrogen sensor was controlled by an integrated system consisting of a heater and a thermometer at any given temperature under severe weather conditions.

Original languageEnglish
Article number024206
JournalJapanese journal of applied physics
Issue number2 Part 1
Publication statusPublished - Feb 2010

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


Dive into the research topics of 'Dual-Gate field-effect transistor hydrogen gas sensor with thermal compensation'. Together they form a unique fingerprint.

Cite this