TY - JOUR
T1 - Dynamics of carrier injection in picene thin-film field-effect transistors with an ionic liquid sheet and ionic liquid gel
AU - Nagasaki, Yuya
AU - Lee, Ji Hyun
AU - Kubozono, Yoshihiro
AU - Kambe, Takashi
N1 - Funding Information:
This research is partly supported by a Grant-in-Aid for Scientific Research from the Japanese Ministry of Education, Culture, Sports, Science and Technology, Japan ( 23340104 and 22244045 ) and by the LEMSUPER project (JST-EU Superconductor project) of the Japan Science and Technology Agency .
Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
PY - 2014/11
Y1 - 2014/11
N2 - We fabricated picene thin-film field-effect transistors (FETs) with an ionic liquid gel and ionic liquid sheet as the gate electrolyte, and then used electron spin resonance (ESR) to investigate the carrier injection process in the organic electric double layer (EDL) FET. The ESR spectra strongly depended on the morphology of gate electrolytes. Three types of carrier injection processes in the EDL-FET were observed by examining the applied-bias time, organic-layer thickness, and gate-voltage dependencies of the electric-field-induced ESR spectrum: (1) interface injection due to electrostatic EDL formation, (2) bulk injection due to penetration of ions (electrochemical bulk doping), and (3) electrochemical reaction. These findings are significant for designing novel materials using the EDL-FET technique because three different carrier injection processes may lead to different physical properties, even in the same organic material.
AB - We fabricated picene thin-film field-effect transistors (FETs) with an ionic liquid gel and ionic liquid sheet as the gate electrolyte, and then used electron spin resonance (ESR) to investigate the carrier injection process in the organic electric double layer (EDL) FET. The ESR spectra strongly depended on the morphology of gate electrolytes. Three types of carrier injection processes in the EDL-FET were observed by examining the applied-bias time, organic-layer thickness, and gate-voltage dependencies of the electric-field-induced ESR spectrum: (1) interface injection due to electrostatic EDL formation, (2) bulk injection due to penetration of ions (electrochemical bulk doping), and (3) electrochemical reaction. These findings are significant for designing novel materials using the EDL-FET technique because three different carrier injection processes may lead to different physical properties, even in the same organic material.
KW - Electric double layer
KW - Electron spin resonance
KW - Field-effect transistor
KW - Ionic liquid gel
KW - Picene
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U2 - 10.1016/j.orgel.2014.08.043
DO - 10.1016/j.orgel.2014.08.043
M3 - Article
AN - SCOPUS:84907200800
SN - 1566-1199
VL - 15
SP - 3070
EP - 3075
JO - Organic Electronics
JF - Organic Electronics
IS - 11
ER -