Effect of defects in ferromagnetic C doped ZnO thin films

Munisamy Subramanian; Yuhei Akaike; Yasuhiko Hayashi; Masaki Tanemura; Hiroshi Ebisu; Daniel Lau Shu Ping

doi:10.1002/pssb.201147609

Effect of defects in ferromagnetic C doped ZnO thin films

Munisamy Subramanian, Yuhei Akaike, Yasuhiko Hayashi, Masaki Tanemura, Hiroshi Ebisu, Daniel Lau Shu Ping

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The present work investigates the relation between ferromagnetism and intrinsic defects of C-doped ZnO thin films. The room-temperature ferromagnetism (RTFM) in C-doped ZnO is due to the charge transfer between Zn 4s and C 2p orbitals. The long-range magnetic interaction in C-doped ZnO is due to carbon-carbon interaction mediated by oxygen. The oxygen- and zinc-related defects in C-doped ZnO affect the mediation of ferromagnetic interaction and the existence of hybridization between Zn and C, respectively.

Original language	English
Pages (from-to)	1254-1257
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	249
Issue number	6
DOIs	https://doi.org/10.1002/pssb.201147609
Publication status	Published - Jun 2012
Externally published	Yes

Keywords

Defects
Magnetic properties
Magnetic semiconductors
SQUID
Zinc oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.201147609

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@article{992aa0ccf7f84e4dbcb855bdc53beffa,

title = "Effect of defects in ferromagnetic C doped ZnO thin films",

abstract = "The present work investigates the relation between ferromagnetism and intrinsic defects of C-doped ZnO thin films. The room-temperature ferromagnetism (RTFM) in C-doped ZnO is due to the charge transfer between Zn 4s and C 2p orbitals. The long-range magnetic interaction in C-doped ZnO is due to carbon-carbon interaction mediated by oxygen. The oxygen- and zinc-related defects in C-doped ZnO affect the mediation of ferromagnetic interaction and the existence of hybridization between Zn and C, respectively.",

keywords = "Defects, Magnetic properties, Magnetic semiconductors, SQUID, Zinc oxide",

author = "Munisamy Subramanian and Yuhei Akaike and Yasuhiko Hayashi and Masaki Tanemura and Hiroshi Ebisu and Ping, {Daniel Lau Shu}",

year = "2012",

month = jun,

doi = "10.1002/pssb.201147609",

language = "English",

volume = "249",

pages = "1254--1257",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "6",

}

TY - JOUR

T1 - Effect of defects in ferromagnetic C doped ZnO thin films

AU - Subramanian, Munisamy

AU - Akaike, Yuhei

AU - Hayashi, Yasuhiko

AU - Tanemura, Masaki

AU - Ebisu, Hiroshi

AU - Ping, Daniel Lau Shu

PY - 2012/6

Y1 - 2012/6

N2 - The present work investigates the relation between ferromagnetism and intrinsic defects of C-doped ZnO thin films. The room-temperature ferromagnetism (RTFM) in C-doped ZnO is due to the charge transfer between Zn 4s and C 2p orbitals. The long-range magnetic interaction in C-doped ZnO is due to carbon-carbon interaction mediated by oxygen. The oxygen- and zinc-related defects in C-doped ZnO affect the mediation of ferromagnetic interaction and the existence of hybridization between Zn and C, respectively.

AB - The present work investigates the relation between ferromagnetism and intrinsic defects of C-doped ZnO thin films. The room-temperature ferromagnetism (RTFM) in C-doped ZnO is due to the charge transfer between Zn 4s and C 2p orbitals. The long-range magnetic interaction in C-doped ZnO is due to carbon-carbon interaction mediated by oxygen. The oxygen- and zinc-related defects in C-doped ZnO affect the mediation of ferromagnetic interaction and the existence of hybridization between Zn and C, respectively.

KW - Defects

KW - Magnetic properties

KW - Magnetic semiconductors

KW - SQUID

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=84862186986&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862186986&partnerID=8YFLogxK

U2 - 10.1002/pssb.201147609

DO - 10.1002/pssb.201147609

M3 - Article

AN - SCOPUS:84862186986

SN - 0370-1972

VL - 249

SP - 1254

EP - 1257

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 6

ER -

Effect of defects in ferromagnetic C doped ZnO thin films

Abstract

Keywords

ASJC Scopus subject areas

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