Effect of Ni doping on the electro-optic property in K(Ta0.6Nb0.4)O3 films

Xueyou Yuan; Yuji Sakurai; Shinya Kondo; Masahito Yoshino; Takanori Nagasaki; Tomoaki Yamada

doi:10.35848/1347-4065/ac7ea9

Effect of Ni doping on the electro-optic property in K(Ta_0.6Nb_0.4)O₃ films

Xueyou Yuan, Yuji Sakurai, Shinya Kondo, Masahito Yoshino, Takanori Nagasaki, Tomoaki Yamada

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The rising of thin-film-based plasmonic electro-optic (EO) devices triggers considerable exploitation of ferroelectric oxide thin films with large EO response. In this study, epitaxial (001)-orientated Ni-doped K(Ta_0.6Nb_0.4)O₃ (KTN) films were fabricated on SrRuO₃/SrTiO₃ substrates via pulsed laser deposition. In comparison with a pure KTN film, a larger withstand electric field was achieved by Ni doping. The EO measurements revealed that the doping of Ni ions induced a decrease in the effective EO coefficient. Instead, the variation of refractive index by the applicable maximum electric field was increased due to the increment of withstand electric field, particularly for the case of 2% Ni dopant.

Original language	English
Article number	SN1005
Journal	Japanese journal of applied physics
Volume	61
Issue number	SN
DOIs	https://doi.org/10.35848/1347-4065/ac7ea9
Publication status	Published - Nov 1 2022

Keywords

electro-optic
ferroelectric
pockels effect
thin films

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.35848/1347-4065/ac7ea9

Cite this

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title = "Effect of Ni doping on the electro-optic property in K(Ta0.6Nb0.4)O3 films",

abstract = "The rising of thin-film-based plasmonic electro-optic (EO) devices triggers considerable exploitation of ferroelectric oxide thin films with large EO response. In this study, epitaxial (001)-orientated Ni-doped K(Ta0.6Nb0.4)O3 (KTN) films were fabricated on SrRuO3/SrTiO3 substrates via pulsed laser deposition. In comparison with a pure KTN film, a larger withstand electric field was achieved by Ni doping. The EO measurements revealed that the doping of Ni ions induced a decrease in the effective EO coefficient. Instead, the variation of refractive index by the applicable maximum electric field was increased due to the increment of withstand electric field, particularly for the case of 2% Ni dopant.",

keywords = "electro-optic, ferroelectric, pockels effect, thin films",

author = "Xueyou Yuan and Yuji Sakurai and Shinya Kondo and Masahito Yoshino and Takanori Nagasaki and Tomoaki Yamada",

note = "Funding Information: This work was supported partly by JST-CREST [Grant No. JPMJCR20Q2 (T.Y.)], JSPS KAKENHI [Grant No. 22H01523 (T.Y.)], the Murata Science Foundation (T.Y.), and the Foundation of Public Interest of Tatematsu (T.Y.). Publisher Copyright: {\textcopyright} 2022 The Japan Society of Applied Physics.",

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T1 - Effect of Ni doping on the electro-optic property in K(Ta0.6Nb0.4)O3 films

AU - Yuan, Xueyou

AU - Sakurai, Yuji

AU - Kondo, Shinya

AU - Yoshino, Masahito

AU - Nagasaki, Takanori

AU - Yamada, Tomoaki

N1 - Funding Information: This work was supported partly by JST-CREST [Grant No. JPMJCR20Q2 (T.Y.)], JSPS KAKENHI [Grant No. 22H01523 (T.Y.)], the Murata Science Foundation (T.Y.), and the Foundation of Public Interest of Tatematsu (T.Y.). Publisher Copyright: © 2022 The Japan Society of Applied Physics.

PY - 2022/11/1

Y1 - 2022/11/1

N2 - The rising of thin-film-based plasmonic electro-optic (EO) devices triggers considerable exploitation of ferroelectric oxide thin films with large EO response. In this study, epitaxial (001)-orientated Ni-doped K(Ta0.6Nb0.4)O3 (KTN) films were fabricated on SrRuO3/SrTiO3 substrates via pulsed laser deposition. In comparison with a pure KTN film, a larger withstand electric field was achieved by Ni doping. The EO measurements revealed that the doping of Ni ions induced a decrease in the effective EO coefficient. Instead, the variation of refractive index by the applicable maximum electric field was increased due to the increment of withstand electric field, particularly for the case of 2% Ni dopant.

AB - The rising of thin-film-based plasmonic electro-optic (EO) devices triggers considerable exploitation of ferroelectric oxide thin films with large EO response. In this study, epitaxial (001)-orientated Ni-doped K(Ta0.6Nb0.4)O3 (KTN) films were fabricated on SrRuO3/SrTiO3 substrates via pulsed laser deposition. In comparison with a pure KTN film, a larger withstand electric field was achieved by Ni doping. The EO measurements revealed that the doping of Ni ions induced a decrease in the effective EO coefficient. Instead, the variation of refractive index by the applicable maximum electric field was increased due to the increment of withstand electric field, particularly for the case of 2% Ni dopant.

KW - electro-optic

KW - ferroelectric

KW - pockels effect

KW - thin films

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