Abstract
Raman scattering of metastable phases of Si and Ge was performed in the pressure range 0 to 10 GPa. The results for Si are discussed in terms of the previously proposed BC8 and R8 structures. The first Raman spectrum of ST12-Ge is also reported. We suggest that photochemically-induced changes in ST12-Ge can explain the discrepancies among previous studies on metastable Ge phases.
Original language | English |
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Pages (from-to) | 413-420 |
Number of pages | 8 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 211 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics