Effect of SrTiO3 seed layer deposition time and thickness on low-temperature crystallization and electrical properties of Pb(Zr, Ti)O3 films by metalorganic chemical vapor deposition

Ji Won Moon; Naoki Wakiya; Keisuke Fujito; Naohiko Iimori; Takanori Kiguchi; Tomohiko Yoshioka; Junzo Tanaka; Kazuo Shinozaki

doi:10.1016/j.mseb.2007.09.051

Effect of SrTiO₃ seed layer deposition time and thickness on low-temperature crystallization and electrical properties of Pb(Zr, Ti)O₃ films by metalorganic chemical vapor deposition

Ji Won Moon, Naoki Wakiya, Keisuke Fujito, Naohiko Iimori, Takanori Kiguchi, Tomohiko Yoshioka, Junzo Tanaka, Kazuo Shinozaki

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The effect of SrTiO₃ seed layer thickness on low-temperature crystallization and electrical properties Pb(Zr, Ti)O₃ (PZT) films by metalorganic chemical vapor deposition (MOCVD) were investigated. The thicknesses of SrTiO₃ seeds were varied with 1-18 nm by deposition time. The preferred (1 1 1) PZT films could be obtained at 304 °C on SrTiO₃ seeds prepared at 500 °C. The intensity of (1 1 1) PZT phase was increased with deposition time due to the enhancement of coverage of SrTiO₃ seeds on substrate. The AFM observation revealed that the growth of PZT films was initially started on SrTiO₃ seeds. The remanent polarization (2P_r) and leakage current density were changed with seed layer thickness. It is considered that concentration of the electric field on SrTiO₃ seeds with capacitance changes were affected to electrical properties of PZT films. The 100 nm thick PZT films on 5 nm thick SrTiO₃ seeds showed 2P_{r max} (18 μC/cm²) with 10^-6 A/cm² of leakage current density.

Original language	English
Pages (from-to)	22-25
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	148
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2007.09.051
Publication status	Published - Feb 25 2008
Externally published	Yes

Keywords

Low-temperature crystallization
PZT
Seed layer
SrTiO

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mseb.2007.09.051

Cite this

Moon, J. W., Wakiya, N., Fujito, K., Iimori, N., Kiguchi, T., Yoshioka, T., Tanaka, J., & Shinozaki, K. (2008). Effect of SrTiO₃ seed layer deposition time and thickness on low-temperature crystallization and electrical properties of Pb(Zr, Ti)O₃ films by metalorganic chemical vapor deposition. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 148(1-3), 22-25. https://doi.org/10.1016/j.mseb.2007.09.051

Effect of SrTiO₃ seed layer deposition time and thickness on low-temperature crystallization and electrical properties of Pb(Zr, Ti)O₃ films by metalorganic chemical vapor deposition. / Moon, Ji Won; Wakiya, Naoki; Fujito, Keisuke et al.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 148, No. 1-3, 25.02.2008, p. 22-25.

Research output: Contribution to journal › Article › peer-review

Moon, JW, Wakiya, N, Fujito, K, Iimori, N, Kiguchi, T, Yoshioka, T, Tanaka, J & Shinozaki, K 2008, 'Effect of SrTiO₃ seed layer deposition time and thickness on low-temperature crystallization and electrical properties of Pb(Zr, Ti)O₃ films by metalorganic chemical vapor deposition', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 148, no. 1-3, pp. 22-25. https://doi.org/10.1016/j.mseb.2007.09.051

Moon JW, Wakiya N, Fujito K, Iimori N, Kiguchi T, Yoshioka T et al. Effect of SrTiO₃ seed layer deposition time and thickness on low-temperature crystallization and electrical properties of Pb(Zr, Ti)O₃ films by metalorganic chemical vapor deposition. Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2008 Feb 25;148(1-3):22-25. doi: 10.1016/j.mseb.2007.09.051

@article{aa3ab6441903441786d5a79efb55ab2e,

title = "Effect of SrTiO3 seed layer deposition time and thickness on low-temperature crystallization and electrical properties of Pb(Zr, Ti)O3 films by metalorganic chemical vapor deposition",

abstract = "The effect of SrTiO3 seed layer thickness on low-temperature crystallization and electrical properties Pb(Zr, Ti)O3 (PZT) films by metalorganic chemical vapor deposition (MOCVD) were investigated. The thicknesses of SrTiO3 seeds were varied with 1-18 nm by deposition time. The preferred (1 1 1) PZT films could be obtained at 304 °C on SrTiO3 seeds prepared at 500 °C. The intensity of (1 1 1) PZT phase was increased with deposition time due to the enhancement of coverage of SrTiO3 seeds on substrate. The AFM observation revealed that the growth of PZT films was initially started on SrTiO3 seeds. The remanent polarization (2Pr) and leakage current density were changed with seed layer thickness. It is considered that concentration of the electric field on SrTiO3 seeds with capacitance changes were affected to electrical properties of PZT films. The 100 nm thick PZT films on 5 nm thick SrTiO3 seeds showed 2Pr max (18 μC/cm2) with 10-6 A/cm2 of leakage current density.",

keywords = "Low-temperature crystallization, PZT, Seed layer, SrTiO",

author = "Moon, {Ji Won} and Naoki Wakiya and Keisuke Fujito and Naohiko Iimori and Takanori Kiguchi and Tomohiko Yoshioka and Junzo Tanaka and Kazuo Shinozaki",

year = "2008",

month = feb,

day = "25",

doi = "10.1016/j.mseb.2007.09.051",

language = "English",

volume = "148",

pages = "22--25",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Effect of SrTiO3 seed layer deposition time and thickness on low-temperature crystallization and electrical properties of Pb(Zr, Ti)O3 films by metalorganic chemical vapor deposition

AU - Moon, Ji Won

AU - Wakiya, Naoki

AU - Fujito, Keisuke

AU - Iimori, Naohiko

AU - Kiguchi, Takanori

AU - Yoshioka, Tomohiko

AU - Tanaka, Junzo

AU - Shinozaki, Kazuo

PY - 2008/2/25

Y1 - 2008/2/25

N2 - The effect of SrTiO3 seed layer thickness on low-temperature crystallization and electrical properties Pb(Zr, Ti)O3 (PZT) films by metalorganic chemical vapor deposition (MOCVD) were investigated. The thicknesses of SrTiO3 seeds were varied with 1-18 nm by deposition time. The preferred (1 1 1) PZT films could be obtained at 304 °C on SrTiO3 seeds prepared at 500 °C. The intensity of (1 1 1) PZT phase was increased with deposition time due to the enhancement of coverage of SrTiO3 seeds on substrate. The AFM observation revealed that the growth of PZT films was initially started on SrTiO3 seeds. The remanent polarization (2Pr) and leakage current density were changed with seed layer thickness. It is considered that concentration of the electric field on SrTiO3 seeds with capacitance changes were affected to electrical properties of PZT films. The 100 nm thick PZT films on 5 nm thick SrTiO3 seeds showed 2Pr max (18 μC/cm2) with 10-6 A/cm2 of leakage current density.

AB - The effect of SrTiO3 seed layer thickness on low-temperature crystallization and electrical properties Pb(Zr, Ti)O3 (PZT) films by metalorganic chemical vapor deposition (MOCVD) were investigated. The thicknesses of SrTiO3 seeds were varied with 1-18 nm by deposition time. The preferred (1 1 1) PZT films could be obtained at 304 °C on SrTiO3 seeds prepared at 500 °C. The intensity of (1 1 1) PZT phase was increased with deposition time due to the enhancement of coverage of SrTiO3 seeds on substrate. The AFM observation revealed that the growth of PZT films was initially started on SrTiO3 seeds. The remanent polarization (2Pr) and leakage current density were changed with seed layer thickness. It is considered that concentration of the electric field on SrTiO3 seeds with capacitance changes were affected to electrical properties of PZT films. The 100 nm thick PZT films on 5 nm thick SrTiO3 seeds showed 2Pr max (18 μC/cm2) with 10-6 A/cm2 of leakage current density.

KW - Low-temperature crystallization

KW - PZT

KW - Seed layer

KW - SrTiO

UR - http://www.scopus.com/inward/record.url?scp=38949177004&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38949177004&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2007.09.051

DO - 10.1016/j.mseb.2007.09.051

M3 - Article

AN - SCOPUS:38949177004

SN - 0921-5107

VL - 148

SP - 22

EP - 25

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -