Abstract
Wurtzite structure ZnO films doped with ~2 at% Cu were deposited at substrate temperatures (Ts) from 350 to 600 °C by helicon magnetron sputtering. All the films exhibited room-temperature (RT) ferromagnetism (FM) and the maximum saturation magnetization (Ms) was 1.2 emu/cm3 (~0.15 μB/Cu). Cu ions were mainly in a divalent state as identified by X-ray photoelectron spectroscopy. FM tended to increase with decreasing Ts, and vacuum annealing enhanced the Ms. These results suggested that oxygen vacancies and/or zinc interstitials might contribute to the ferromagnetic performance. Thus, the observed FM was explained in terms of the defect related mechanism.
Original language | English |
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Pages (from-to) | 4270-4274 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 311 |
Issue number | 17 |
DOIs | |
Publication status | Published - Aug 15 2009 |
Externally published | Yes |
Keywords
- A1. Doping
- A3. Helicon magnetron sputtering
- B2. Magnetic semiconductor
- B2. Semiconducting II-VI materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry