Effects of carbon implantation on the electrical properties of amorphous In2O3 thin film

K. Hanamoto; M. Sasaki; H. Miki; Y. Nakayama

doi:10.1016/S0168-583X(01)00788-1

Effects of carbon implantation on the electrical properties of amorphous In₂O₃ thin film

K. Hanamoto, M. Sasaki, H. Miki, Y. Nakayama

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Carbon ions with an energy of 30 keV have been implanted into amorphous In₂O₃ thin films at doses of 1×10¹⁵-2×10¹⁶cm^-2. After implantation the films were annealed in air and subsequently in a vacuum at 350 °C for 1 h. The electrical resistivities of carbon-implanted films decreased due to the increase in the carrier concentration. However, the whole properties were not much improved compared to a previous experiment by the use of crystalline In₂O₃ film as a starting material. The relation between the crystal structure and the electrical property will be discussed.

Original language	English
Pages (from-to)	371-377
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	184
Issue number	3
DOIs	https://doi.org/10.1016/S0168-583X(01)00788-1
Publication status	Published - Nov 2001
Externally published	Yes

Keywords

Amorphous InO
Carbon implantation
Electrical property

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/S0168-583X(01)00788-1

Cite this

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title = "Effects of carbon implantation on the electrical properties of amorphous In2O3 thin film",

abstract = "Carbon ions with an energy of 30 keV have been implanted into amorphous In2O3 thin films at doses of 1×1015-2×1016cm-2. After implantation the films were annealed in air and subsequently in a vacuum at 350 °C for 1 h. The electrical resistivities of carbon-implanted films decreased due to the increase in the carrier concentration. However, the whole properties were not much improved compared to a previous experiment by the use of crystalline In2O3 film as a starting material. The relation between the crystal structure and the electrical property will be discussed.",

keywords = "Amorphous InO, Carbon implantation, Electrical property",

author = "K. Hanamoto and M. Sasaki and H. Miki and Y. Nakayama",

note = "Funding Information: This work was supported in part by the Science Research Promotion Fund from Japan Private School Promotion Foundation and by the New Energy and Industrial Technology Development Organization (NEDO).",

year = "2001",

month = nov,

doi = "10.1016/S0168-583X(01)00788-1",

language = "English",

volume = "184",

pages = "371--377",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "3",

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TY - JOUR

T1 - Effects of carbon implantation on the electrical properties of amorphous In2O3 thin film

AU - Hanamoto, K.

AU - Sasaki, M.

AU - Miki, H.

AU - Nakayama, Y.

N1 - Funding Information: This work was supported in part by the Science Research Promotion Fund from Japan Private School Promotion Foundation and by the New Energy and Industrial Technology Development Organization (NEDO).

PY - 2001/11

Y1 - 2001/11

N2 - Carbon ions with an energy of 30 keV have been implanted into amorphous In2O3 thin films at doses of 1×1015-2×1016cm-2. After implantation the films were annealed in air and subsequently in a vacuum at 350 °C for 1 h. The electrical resistivities of carbon-implanted films decreased due to the increase in the carrier concentration. However, the whole properties were not much improved compared to a previous experiment by the use of crystalline In2O3 film as a starting material. The relation between the crystal structure and the electrical property will be discussed.

AB - Carbon ions with an energy of 30 keV have been implanted into amorphous In2O3 thin films at doses of 1×1015-2×1016cm-2. After implantation the films were annealed in air and subsequently in a vacuum at 350 °C for 1 h. The electrical resistivities of carbon-implanted films decreased due to the increase in the carrier concentration. However, the whole properties were not much improved compared to a previous experiment by the use of crystalline In2O3 film as a starting material. The relation between the crystal structure and the electrical property will be discussed.

KW - Amorphous InO

KW - Carbon implantation

KW - Electrical property

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U2 - 10.1016/S0168-583X(01)00788-1

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SN - 0168-583X

VL - 184

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EP - 377

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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