The effects of hydrogen atoms on postannealing of phosphorous-ion implanted silicon was analyzed. The recovery-enhancing effect of hydrogen was determined as a function of annealing temperature, dose quantity and plasma intensity. It was found that the postannealing treatment reduced the resistivity of the surface region which was very high just after the implantation.
|Number of pages||5|
|Journal||Journal of Applied Physics|
|Publication status||Published - Jan 1 2003|
ASJC Scopus subject areas
- Physics and Astronomy(all)