Effects of hydrogen atoms on postannealing of phosphorus-ion implanted silicon

Yoshifumi Yamashita; Yoichi Kamiura; Ikuhisa Yamamoto; Takeshi Ishiyama; Yoshiyuki Sato

doi:10.1063/1.1527713

Effects of hydrogen atoms on postannealing of phosphorus-ion implanted silicon

Yoshifumi Yamashita, Yoichi Kamiura, Ikuhisa Yamamoto, Takeshi Ishiyama, Yoshiyuki Sato

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effects of hydrogen atoms on postannealing of phosphorous-ion implanted silicon was analyzed. The recovery-enhancing effect of hydrogen was determined as a function of annealing temperature, dose quantity and plasma intensity. It was found that the postannealing treatment reduced the resistivity of the surface region which was very high just after the implantation.

Original language	English
Pages (from-to)	134-138
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.1527713
Publication status	Published - Jan 1 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The effects of hydrogen atoms on postannealing of phosphorous-ion implanted silicon was analyzed. The recovery-enhancing effect of hydrogen was determined as a function of annealing temperature, dose quantity and plasma intensity. It was found that the postannealing treatment reduced the resistivity of the surface region which was very high just after the implantation.",

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AU - Kamiura, Yoichi

AU - Yamamoto, Ikuhisa

AU - Ishiyama, Takeshi

AU - Sato, Yoshiyuki

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The effects of hydrogen atoms on postannealing of phosphorous-ion implanted silicon was analyzed. The recovery-enhancing effect of hydrogen was determined as a function of annealing temperature, dose quantity and plasma intensity. It was found that the postannealing treatment reduced the resistivity of the surface region which was very high just after the implantation.

AB - The effects of hydrogen atoms on postannealing of phosphorous-ion implanted silicon was analyzed. The recovery-enhancing effect of hydrogen was determined as a function of annealing temperature, dose quantity and plasma intensity. It was found that the postannealing treatment reduced the resistivity of the surface region which was very high just after the implantation.

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Effects of hydrogen atoms on postannealing of phosphorus-ion implanted silicon

Abstract

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