TY - JOUR
T1 - Effects of Interfacial Electron Transfer in Metal Complex-Semiconductor Hybrid Photocatalysts on Z-Scheme CO2 Reduction under Visible Light
AU - Nakada, Akinobu
AU - Kuriki, Ryo
AU - Sekizawa, Keita
AU - Nishioka, Shunta
AU - Vequizo, Junie Jhon M.
AU - Uchiyama, Tomoki
AU - Kawakami, Nozomi
AU - Lu, Daling
AU - Yamakata, Akira
AU - Uchimoto, Yoshiharu
AU - Ishitani, Osamu
AU - Maeda, Kazuhiko
N1 - Funding Information:
It was also partially supported by a Grant-in-Aid for Young Scientists (A) (Project JP16H06130). K.M. acknowledges The Noguchi Institute and Murata Research Foundation for financial support. A.N. and S.N. thank the Academy for Co-creative Education of Environment and Energy Science (ACEEES) at Tokyo Tech for financial support. R.K. and S.N. acknowledge support by a JSPS Fellowship for Young Scientists.
Funding Information:
This work was supported by a Grant-in-Aid for Scientific Research on Innovative Area “Mixed Anion” (Project JP16H06441 and JP17H05489) from JSPS and CREST “Molecular Technology” (Project JPMJCR13L1)” from JST.
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/10/5
Y1 - 2018/10/5
N2 - The Z-scheme CO2 reduction activity of metal complex-semiconductor hybrid photocatalysts was investigated in detail with a focus on the interfacial electron transfer process. Semiconductors of GaN:ZnO solid solutions, TaON, and Ta/N-codoped TiO2 were examined as components of the hybrid photocatalyst in combination with a binuclear Ru(II) complex. The (photo)physical properties of the semiconductor part were found to strongly affect the efficiency of interfacial electron transfer from/to the Ru complex photosensitizer unit, which was attached to the semiconductor surface. The photocatalytic activity of the hybrids showed a reasonable relationship with the efficiencies of forward and backward electron transfer. Among the three semiconductors, the highest activity was obtained with GaN:ZnO, which had the most negative conduction band potential among the semiconductors examined. The experimental results clearly demonstrated that analyses of the emission quenching process of the excited photosensitizer moiety of the binuclear Ru(II) complex allowed visualization of the interfacial electron transfer between the semiconductor and the Ru complex, giving us a rational guideline to improve the efficiency of the hybrid photocatalyst for Z-scheme CO2 reduction.
AB - The Z-scheme CO2 reduction activity of metal complex-semiconductor hybrid photocatalysts was investigated in detail with a focus on the interfacial electron transfer process. Semiconductors of GaN:ZnO solid solutions, TaON, and Ta/N-codoped TiO2 were examined as components of the hybrid photocatalyst in combination with a binuclear Ru(II) complex. The (photo)physical properties of the semiconductor part were found to strongly affect the efficiency of interfacial electron transfer from/to the Ru complex photosensitizer unit, which was attached to the semiconductor surface. The photocatalytic activity of the hybrids showed a reasonable relationship with the efficiencies of forward and backward electron transfer. Among the three semiconductors, the highest activity was obtained with GaN:ZnO, which had the most negative conduction band potential among the semiconductors examined. The experimental results clearly demonstrated that analyses of the emission quenching process of the excited photosensitizer moiety of the binuclear Ru(II) complex allowed visualization of the interfacial electron transfer between the semiconductor and the Ru complex, giving us a rational guideline to improve the efficiency of the hybrid photocatalyst for Z-scheme CO2 reduction.
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U2 - 10.1021/acscatal.8b03062
DO - 10.1021/acscatal.8b03062
M3 - Article
AN - SCOPUS:85054164527
SN - 2155-5435
VL - 8
SP - 9744
EP - 9754
JO - ACS Catalysis
JF - ACS Catalysis
IS - 10
ER -