Efficiency of photocarrier injection in a VO2/TiO2:Nb heterostructure

Zenji Hiroi; Tohru Yamauchi; Yuji Muraoka; Takaki Muramatsu; Jun Ichi Yamaura

doi:10.1143/JPSJ.72.3049

Efficiency of photocarrier injection in a VO₂/TiO₂:Nb heterostructure

Zenji Hiroi, Tohru Yamauchi, Yuji Muraoka, Takaki Muramatsu, Jun Ichi Yamaura

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The efficiency of photocarrier injection in a VO₂/TiO ₂:Nb heterostructure is studied by measuring I-V characteristics at room temperature under ultraviolet light irradiation. It is revealed that photogenerated hole carriers in the TiO₂:Nb substrate are injected and accumulated in the VO₂ film by the photovoltaic effect. The surface charge density is controlled successfully in a wide range of 10 ⁹-10₁₃ cm^-2 as a function of light irradiance. The maximum hole density of 9 × 10¹⁸ cm^-3 is attained at a light irradiance of 133 mW/cm², which is estimated by assuming the uniform distribution of holes in the film. It is suggested that high efficiency can be achieved by utilizing the large dielectric constant of titanium oxide substrates.

Original language	English
Pages (from-to)	3049-3052
Number of pages	4
Journal	journal of the physical society of japan
Volume	72
Issue number	12
DOIs	https://doi.org/10.1143/JPSJ.72.3049
Publication status	Published - Dec 2003
Externally published	Yes

Keywords

Heterostructure
Photocarrier injection
TiO
Transition metal oxides
VO

ASJC Scopus subject areas

Physics and Astronomy(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1143/JPSJ.72.3049

Cite this

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title = "Efficiency of photocarrier injection in a VO2/TiO2:Nb heterostructure",

abstract = "The efficiency of photocarrier injection in a VO2/TiO 2:Nb heterostructure is studied by measuring I-V characteristics at room temperature under ultraviolet light irradiation. It is revealed that photogenerated hole carriers in the TiO2:Nb substrate are injected and accumulated in the VO2 film by the photovoltaic effect. The surface charge density is controlled successfully in a wide range of 10 9-1013 cm-2 as a function of light irradiance. The maximum hole density of 9 × 1018 cm-3 is attained at a light irradiance of 133 mW/cm2, which is estimated by assuming the uniform distribution of holes in the film. It is suggested that high efficiency can be achieved by utilizing the large dielectric constant of titanium oxide substrates.",

keywords = "Heterostructure, Photocarrier injection, TiO, Transition metal oxides, VO",

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T1 - Efficiency of photocarrier injection in a VO2/TiO2:Nb heterostructure

AU - Hiroi, Zenji

AU - Yamauchi, Tohru

AU - Muraoka, Yuji

AU - Muramatsu, Takaki

AU - Yamaura, Jun Ichi

PY - 2003/12

Y1 - 2003/12

N2 - The efficiency of photocarrier injection in a VO2/TiO 2:Nb heterostructure is studied by measuring I-V characteristics at room temperature under ultraviolet light irradiation. It is revealed that photogenerated hole carriers in the TiO2:Nb substrate are injected and accumulated in the VO2 film by the photovoltaic effect. The surface charge density is controlled successfully in a wide range of 10 9-1013 cm-2 as a function of light irradiance. The maximum hole density of 9 × 1018 cm-3 is attained at a light irradiance of 133 mW/cm2, which is estimated by assuming the uniform distribution of holes in the film. It is suggested that high efficiency can be achieved by utilizing the large dielectric constant of titanium oxide substrates.

AB - The efficiency of photocarrier injection in a VO2/TiO 2:Nb heterostructure is studied by measuring I-V characteristics at room temperature under ultraviolet light irradiation. It is revealed that photogenerated hole carriers in the TiO2:Nb substrate are injected and accumulated in the VO2 film by the photovoltaic effect. The surface charge density is controlled successfully in a wide range of 10 9-1013 cm-2 as a function of light irradiance. The maximum hole density of 9 × 1018 cm-3 is attained at a light irradiance of 133 mW/cm2, which is estimated by assuming the uniform distribution of holes in the film. It is suggested that high efficiency can be achieved by utilizing the large dielectric constant of titanium oxide substrates.

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