Electric-double-layer transistors with thin crystals of FeSe 1-xTex (x=0.9 and 1.0)

R. Eguchi; M. Senda; E. Uesugi; H. Goto; T. Kambe; T. Noji; Y. Koike; A. Fujiwara; Y. Kubozono

doi:10.1063/1.4795626

Electric-double-layer transistors with thin crystals of FeSe _1-xTe_x (x=0.9 and 1.0)

R. Eguchi, M. Senda, E. Uesugi, H. Goto, T. Kambe, T. Noji, Y. Koike, A. Fujiwara, Y. Kubozono

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Field-effect transistor (FET) devices using thin crystals of FeSe _1-xTe_x (x=0.9 and 1.0) have been fabricated with an electric-double-layer (EDL) capacitor. Despite the presence of substantial quantities of electron and hole carriers in the bulk due to the semimetallic electronic structure of FeSe_1-xTe_x, we have observed p-channel depletion-type FET characteristics, in contrast to the n-channel normally on FET characteristics of a Bi₂Se₃ EDL FET. In FeSe_1-xTe_x, the mobile carriers, holes, are depleted in the channel region by accumulating electrons, resulting in a decrease in conductivity. This result is consistent with the experimentally observed positive Hall coefficient at room temperature.

Original language	English
Article number	103506
Journal	Applied Physics Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.4795626
Publication status	Published - Mar 11 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electric-double-layer transistors with thin crystals of FeSe 1-xTex (x=0.9 and 1.0)",

abstract = "Field-effect transistor (FET) devices using thin crystals of FeSe 1-xTex (x=0.9 and 1.0) have been fabricated with an electric-double-layer (EDL) capacitor. Despite the presence of substantial quantities of electron and hole carriers in the bulk due to the semimetallic electronic structure of FeSe1-xTex, we have observed p-channel depletion-type FET characteristics, in contrast to the n-channel normally on FET characteristics of a Bi2Se3 EDL FET. In FeSe1-xTex, the mobile carriers, holes, are depleted in the channel region by accumulating electrons, resulting in a decrease in conductivity. This result is consistent with the experimentally observed positive Hall coefficient at room temperature.",

author = "R. Eguchi and M. Senda and E. Uesugi and H. Goto and T. Kambe and T. Noji and Y. Koike and A. Fujiwara and Y. Kubozono",

note = "Funding Information: This study was partly supported by Grant-in-aid (23684028, 22244045, 24654105) of MEXT, by Program to disseminate tenure tracking system in Japan Science and Technology Agency (JST), by the LEMSUPER project (JST-EU Superconductor Project) in JST, and by Special Project of Okayama University/MEXT.",

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doi = "10.1063/1.4795626",

language = "English",

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T1 - Electric-double-layer transistors with thin crystals of FeSe 1-xTex (x=0.9 and 1.0)

AU - Eguchi, R.

AU - Senda, M.

AU - Uesugi, E.

AU - Goto, H.

AU - Kambe, T.

AU - Noji, T.

AU - Koike, Y.

AU - Fujiwara, A.

AU - Kubozono, Y.

N1 - Funding Information: This study was partly supported by Grant-in-aid (23684028, 22244045, 24654105) of MEXT, by Program to disseminate tenure tracking system in Japan Science and Technology Agency (JST), by the LEMSUPER project (JST-EU Superconductor Project) in JST, and by Special Project of Okayama University/MEXT.

PY - 2013/3/11

Y1 - 2013/3/11

N2 - Field-effect transistor (FET) devices using thin crystals of FeSe 1-xTex (x=0.9 and 1.0) have been fabricated with an electric-double-layer (EDL) capacitor. Despite the presence of substantial quantities of electron and hole carriers in the bulk due to the semimetallic electronic structure of FeSe1-xTex, we have observed p-channel depletion-type FET characteristics, in contrast to the n-channel normally on FET characteristics of a Bi2Se3 EDL FET. In FeSe1-xTex, the mobile carriers, holes, are depleted in the channel region by accumulating electrons, resulting in a decrease in conductivity. This result is consistent with the experimentally observed positive Hall coefficient at room temperature.

AB - Field-effect transistor (FET) devices using thin crystals of FeSe 1-xTex (x=0.9 and 1.0) have been fabricated with an electric-double-layer (EDL) capacitor. Despite the presence of substantial quantities of electron and hole carriers in the bulk due to the semimetallic electronic structure of FeSe1-xTex, we have observed p-channel depletion-type FET characteristics, in contrast to the n-channel normally on FET characteristics of a Bi2Se3 EDL FET. In FeSe1-xTex, the mobile carriers, holes, are depleted in the channel region by accumulating electrons, resulting in a decrease in conductivity. This result is consistent with the experimentally observed positive Hall coefficient at room temperature.

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Electric-double-layer transistors with thin crystals of FeSe _1-xTe_x (x=0.9 and 1.0)

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