Electric-double-layer transistors with thin crystals of FeSe 1-xTex (x=0.9 and 1.0)

R. Eguchi, M. Senda, E. Uesugi, H. Goto, T. Kambe, T. Noji, Y. Koike, A. Fujiwara, Y. Kubozono

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Field-effect transistor (FET) devices using thin crystals of FeSe 1-xTex (x=0.9 and 1.0) have been fabricated with an electric-double-layer (EDL) capacitor. Despite the presence of substantial quantities of electron and hole carriers in the bulk due to the semimetallic electronic structure of FeSe1-xTex, we have observed p-channel depletion-type FET characteristics, in contrast to the n-channel normally on FET characteristics of a Bi2Se3 EDL FET. In FeSe1-xTex, the mobile carriers, holes, are depleted in the channel region by accumulating electrons, resulting in a decrease in conductivity. This result is consistent with the experimentally observed positive Hall coefficient at room temperature.

Original languageEnglish
Article number103506
JournalApplied Physics Letters
Issue number10
Publication statusPublished - Mar 11 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Electric-double-layer transistors with thin crystals of FeSe 1-xTex (x=0.9 and 1.0)'. Together they form a unique fingerprint.

Cite this