TY - JOUR
T1 - Electrical and optical properties of boron and nitrogen implanted In2O3 thin films
AU - Hanamoto, K.
AU - Sasaki, M.
AU - Miyatani, K.
AU - Kaito, C.
AU - Miki, H.
AU - Nakayama, Y.
N1 - Funding Information:
This work was supported in part by The Science Research Promotion Fund from Japan Private School Promotion Foundation and by the New Energy and Industrial Technology Development Organization (NEDO).
PY - 2001/1
Y1 - 2001/1
N2 - Electrical and optical properties of In2O3 thin films doped with boron and nitrogen have been studied. Boron and nitrogen ions were implanted into In2O3 thin films with an energy of 25 and 35 keV, respectively, at doses of 1×1015-1.6×1016cm-2. After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two-step annealing at 350 °C, the electrical resistivity of the boron implanted sample with a dose of 4×1015 cm-2 achieved 4.4×10-4 Ω cm with an averaged optical transmittance of 84% at a wavelength between 380 and 780 nm. On the other hand, for nitrogen implanted samples, the resistivity did not improve by ion implantation but the optical transmittance was unchanged.
AB - Electrical and optical properties of In2O3 thin films doped with boron and nitrogen have been studied. Boron and nitrogen ions were implanted into In2O3 thin films with an energy of 25 and 35 keV, respectively, at doses of 1×1015-1.6×1016cm-2. After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two-step annealing at 350 °C, the electrical resistivity of the boron implanted sample with a dose of 4×1015 cm-2 achieved 4.4×10-4 Ω cm with an averaged optical transmittance of 84% at a wavelength between 380 and 780 nm. On the other hand, for nitrogen implanted samples, the resistivity did not improve by ion implantation but the optical transmittance was unchanged.
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U2 - 10.1016/S0168-583X(00)00334-7
DO - 10.1016/S0168-583X(00)00334-7
M3 - Article
AN - SCOPUS:0035150331
SN - 0168-583X
VL - 173
SP - 287
EP - 291
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 3
ER -