TY - JOUR
T1 - Electrical and optical properties of carbon implanted In2O3 thin film
AU - Hanamoto, K.
AU - Sasaki, M.
AU - Yoneda, T.
AU - Miyatani, K.
AU - Miki, H.
AU - Kaito, C.
AU - Nakayama, Y.
N1 - Funding Information:
This work was supported in part by the Science Research Promotion Fund from Japan Private School Promotion Foundation, by the New Energy and Industrial Technology Development Organization (NEDO), and the Academic frontier promotion project, Ministry of Education (Monbusho).
PY - 2000/7
Y1 - 2000/7
N2 - Electrical and optical properties of In2O3 thin film with carbon ion implantation have been studied. The location of the implanted carbon in the film was also investigated by means of a high-resolution electron microscope. Carbon ions were implanted into In2O3 thin films with an energy of 30 keV at doses of 1 × 1015 to 2 × 1016 cm-2. After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two step annealing at 350°C, the electrical resistivity achieved for a sample with an ion dose of 5 × 1015 cm-2 was 5.4 × 10-4 Ω cm with an optical transmittance of 82% at a wavelength of 550 nm.
AB - Electrical and optical properties of In2O3 thin film with carbon ion implantation have been studied. The location of the implanted carbon in the film was also investigated by means of a high-resolution electron microscope. Carbon ions were implanted into In2O3 thin films with an energy of 30 keV at doses of 1 × 1015 to 2 × 1016 cm-2. After implantation the films were annealed for 1 h in air and subsequently for 1 h in a vacuum. After the two step annealing at 350°C, the electrical resistivity achieved for a sample with an ion dose of 5 × 1015 cm-2 was 5.4 × 10-4 Ω cm with an optical transmittance of 82% at a wavelength of 550 nm.
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U2 - 10.1016/S0168-583X(99)01201-X
DO - 10.1016/S0168-583X(99)01201-X
M3 - Article
AN - SCOPUS:0033718907
SN - 0168-583X
VL - 168
SP - 389
EP - 394
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 3
ER -