Abstract
Cu-doped ZnO and AlN films both exhibiting room-temperature (RT) ferromagnetism (FM) were deposited by helicon magnetron sputtering. Magnetic anisotropy was observed for all the films; saturated magnetization was larger under the applied field perpendicular to the sample surface than the in-plane field, which indicates intrinsic ferromagnetism. The easy axis of magnetization was along the [0 0 0 2] direction. Electron spin resonance (ESR) analysis showed that spins tended to align in a perpendicular direction to the surface, which might account for the observed magnetic anisotropy.
Original language | English |
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Pages (from-to) | 3952-3954 |
Number of pages | 3 |
Journal | Physica B: Condensed Matter |
Volume | 405 |
Issue number | 18 |
DOIs | |
Publication status | Published - Sept 15 2010 |
Externally published | Yes |
Keywords
- Diluted magnetic semiconductor
- Electron spin resonance (ESR)
- Magnetic anisotropy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering