Electronic states of the antiferromagnet UGa3

Dai Aoki; Norihito Suzuki; Kousaku Miyake; Yoshihiko Inada; Rikio Settai; Kiyohiro Sugiyama; Etsuji Yamamoto; Yoshinori Haga; Yoshichika Onuki; Tetsutaro Inoue; Koichi Kindo; Hitoshi Sugawara; Hideyuki Sato; Hiroshi Yamagami

doi:10.1143/JPSJ.70.538

Electronic states of the antiferromagnet UGa₃

Dai Aoki, Norihito Suzuki, Kousaku Miyake, Yoshihiko Inada, Rikio Settai, Kiyohiro Sugiyama, Etsuji Yamamoto, Yoshinori Haga, Yoshichika Onuki, Tetsutaro Inoue, Koichi Kindo, Hitoshi Sugawara, Hideyuki Sato, Hiroshi Yamagami

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

We have grown a single crystal with the residual resistivity ratio of 81, and studied its electronic properties of the cubic antiferromagnetic compound UGa₃. From the transverse magnetoresistance experiments, UGa₃ has been found to be a compensated metal with equal carrier numbers of electrons and holes. In the de Haas-van Alphen experiments we have detected nine closed Fermi surfaces. Detected cyclotron effective mass is relatively large, ranging from 2.3 to 9.4 m₀. The topology of the Fermi surface is compared to the result of energy band calculations.

Original language	English
Pages (from-to)	538-546
Number of pages	9
Journal	journal of the physical society of japan
Volume	70
Issue number	2
DOIs	https://doi.org/10.1143/JPSJ.70.538
Publication status	Published - Feb 1 2001
Externally published	Yes

Keywords

Fermi surface
Hall coefficient
Magnetoresistance
Thermoelectric power
UGa
dHvA effect

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1143/JPSJ.70.538

Cite this

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title = "Electronic states of the antiferromagnet UGa3",

abstract = "We have grown a single crystal with the residual resistivity ratio of 81, and studied its electronic properties of the cubic antiferromagnetic compound UGa3. From the transverse magnetoresistance experiments, UGa3 has been found to be a compensated metal with equal carrier numbers of electrons and holes. In the de Haas-van Alphen experiments we have detected nine closed Fermi surfaces. Detected cyclotron effective mass is relatively large, ranging from 2.3 to 9.4 m0. The topology of the Fermi surface is compared to the result of energy band calculations.",

keywords = "Fermi surface, Hall coefficient, Magnetoresistance, Thermoelectric power, UGa, dHvA effect",

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T1 - Electronic states of the antiferromagnet UGa3

AU - Aoki, Dai

AU - Suzuki, Norihito

AU - Miyake, Kousaku

AU - Inada, Yoshihiko

AU - Settai, Rikio

AU - Sugiyama, Kiyohiro

AU - Yamamoto, Etsuji

AU - Haga, Yoshinori

AU - Onuki, Yoshichika

AU - Inoue, Tetsutaro

AU - Kindo, Koichi

AU - Sugawara, Hitoshi

AU - Sato, Hideyuki

AU - Yamagami, Hiroshi

PY - 2001/2/1

Y1 - 2001/2/1

N2 - We have grown a single crystal with the residual resistivity ratio of 81, and studied its electronic properties of the cubic antiferromagnetic compound UGa3. From the transverse magnetoresistance experiments, UGa3 has been found to be a compensated metal with equal carrier numbers of electrons and holes. In the de Haas-van Alphen experiments we have detected nine closed Fermi surfaces. Detected cyclotron effective mass is relatively large, ranging from 2.3 to 9.4 m0. The topology of the Fermi surface is compared to the result of energy band calculations.

AB - We have grown a single crystal with the residual resistivity ratio of 81, and studied its electronic properties of the cubic antiferromagnetic compound UGa3. From the transverse magnetoresistance experiments, UGa3 has been found to be a compensated metal with equal carrier numbers of electrons and holes. In the de Haas-van Alphen experiments we have detected nine closed Fermi surfaces. Detected cyclotron effective mass is relatively large, ranging from 2.3 to 9.4 m0. The topology of the Fermi surface is compared to the result of energy band calculations.

KW - Fermi surface

KW - Hall coefficient

KW - Magnetoresistance

KW - Thermoelectric power

KW - UGa

KW - dHvA effect

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