Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy

T. Yokoya; A. Fukushima; T. Kiss; K. Kobayashi; S. Shin; K. Moriguchi; A. Shintani; H. Fukuoka; S. Yamanaka

Electronic structure and superconducting gap of silicon clathrate Ba₈Si₄₆ studied with ultrahigh-resolution photoemission spectroscopy

T. Yokoya, A. Fukushima, T. Kiss, K. Kobayashi, S. Shin, K. Moriguchi, A. Shintani, H. Fukuoka, S. Yamanaka

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Abstract

We study the electronic structure and superconducting transition of silicon clathrate Ba₈Si₄₆ (T_c=8 K) using photoemission spectroscopy. We observe a narrow band at the Fermi level (E_F), whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K [2Δ(0)/k_BT_c=3.51]. Fine structures associated with phonons are observed within 70 meV of E_F. These results characterize Ba₈Si₄₆ as a weak-coupling superconductor most probably driven by phonon.

Original language	English
Article number	172504
Pages (from-to)	1725041-1725044
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	17
Publication status	Published - Nov 1 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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title = "Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy",

abstract = "We study the electronic structure and superconducting transition of silicon clathrate Ba8Si46 (Tc=8 K) using photoemission spectroscopy. We observe a narrow band at the Fermi level (EF), whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K [2Δ(0)/kBTc=3.51]. Fine structures associated with phonons are observed within 70 meV of EF. These results characterize Ba8Si46 as a weak-coupling superconductor most probably driven by phonon.",

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T1 - Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy

AU - Yokoya, T.

AU - Fukushima, A.

AU - Kiss, T.

AU - Kobayashi, K.

AU - Shin, S.

AU - Moriguchi, K.

AU - Shintani, A.

AU - Fukuoka, H.

AU - Yamanaka, S.

PY - 2001/11/1

Y1 - 2001/11/1

N2 - We study the electronic structure and superconducting transition of silicon clathrate Ba8Si46 (Tc=8 K) using photoemission spectroscopy. We observe a narrow band at the Fermi level (EF), whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K [2Δ(0)/kBTc=3.51]. Fine structures associated with phonons are observed within 70 meV of EF. These results characterize Ba8Si46 as a weak-coupling superconductor most probably driven by phonon.

AB - We study the electronic structure and superconducting transition of silicon clathrate Ba8Si46 (Tc=8 K) using photoemission spectroscopy. We observe a narrow band at the Fermi level (EF), whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K [2Δ(0)/kBTc=3.51]. Fine structures associated with phonons are observed within 70 meV of EF. These results characterize Ba8Si46 as a weak-coupling superconductor most probably driven by phonon.

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ER -

Electronic structure and superconducting gap of silicon clathrate Ba₈Si₄₆ studied with ultrahigh-resolution photoemission spectroscopy

Abstract

ASJC Scopus subject areas

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