Electronic structure and superconducting gap of silicon clathrate (formula presented) studied with ultrahigh-resolution photoemission spectroscopy

A. Shintani; S. Yamanaka; T. Yokoya; S. Shin; A. Fukushima; T. Kiss; K. Kobayashi; K. Moriguchi; H. Fukuoka

doi:10.1103/PhysRevB.64.172504

Electronic structure and superconducting gap of silicon clathrate (formula presented) studied with ultrahigh-resolution photoemission spectroscopy

A. Shintani, S. Yamanaka, T. Yokoya, S. Shin, A. Fukushima, T. Kiss, K. Kobayashi, K. Moriguchi, H. Fukuoka

Research output: Contribution to journal › Article › peer-review

Abstract

We study the electronic structure and superconducting transition of silicon clathrate (formula presented) using photoemission spectroscopy. We observe a narrow band at the Fermi level (formula presented) whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K (formula presented) Fine structures associated with phonons are observed within 70 meV of (formula presented) These results characterize (formula presented) as a weak-coupling superconductor most probably driven by phonon.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.64.172504
Publication status	Published - 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.64.172504

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Shintani, A., Yamanaka, S., Yokoya, T., Shin, S., Fukushima, A., Kiss, T., Kobayashi, K., Moriguchi, K., & Fukuoka, H. (2001). Electronic structure and superconducting gap of silicon clathrate (formula presented) studied with ultrahigh-resolution photoemission spectroscopy. Physical Review B - Condensed Matter and Materials Physics, 64(17). https://doi.org/10.1103/PhysRevB.64.172504

Shintani, A, Yamanaka, S, Yokoya, T, Shin, S, Fukushima, A, Kiss, T, Kobayashi, K, Moriguchi, K & Fukuoka, H 2001, 'Electronic structure and superconducting gap of silicon clathrate (formula presented) studied with ultrahigh-resolution photoemission spectroscopy', Physical Review B - Condensed Matter and Materials Physics, vol. 64, no. 17. https://doi.org/10.1103/PhysRevB.64.172504

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title = "Electronic structure and superconducting gap of silicon clathrate (formula presented) studied with ultrahigh-resolution photoemission spectroscopy",

abstract = "We study the electronic structure and superconducting transition of silicon clathrate (formula presented) using photoemission spectroscopy. We observe a narrow band at the Fermi level (formula presented) whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K (formula presented) Fine structures associated with phonons are observed within 70 meV of (formula presented) These results characterize (formula presented) as a weak-coupling superconductor most probably driven by phonon.",

author = "A. Shintani and S. Yamanaka and T. Yokoya and S. Shin and A. Fukushima and T. Kiss and K. Kobayashi and K. Moriguchi and H. Fukuoka",

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doi = "10.1103/PhysRevB.64.172504",

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AU - Shintani, A.

AU - Yamanaka, S.

AU - Yokoya, T.

AU - Shin, S.

AU - Fukushima, A.

AU - Kiss, T.

AU - Kobayashi, K.

AU - Moriguchi, K.

AU - Fukuoka, H.

PY - 2001

Y1 - 2001

N2 - We study the electronic structure and superconducting transition of silicon clathrate (formula presented) using photoemission spectroscopy. We observe a narrow band at the Fermi level (formula presented) whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K (formula presented) Fine structures associated with phonons are observed within 70 meV of (formula presented) These results characterize (formula presented) as a weak-coupling superconductor most probably driven by phonon.

AB - We study the electronic structure and superconducting transition of silicon clathrate (formula presented) using photoemission spectroscopy. We observe a narrow band at the Fermi level (formula presented) whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K (formula presented) Fine structures associated with phonons are observed within 70 meV of (formula presented) These results characterize (formula presented) as a weak-coupling superconductor most probably driven by phonon.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 17

ER -

Electronic structure and superconducting gap of silicon clathrate (formula presented) studied with ultrahigh-resolution photoemission spectroscopy

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