Abstract
We investigate the electronic structure of 3 d1 configuration vanadium oxides (VO2, SrVO3 and CaVO3) using soft X-ray (SX) and hard X-ray (HX) photoemission spectroscopy (PES). The valence band spectra of VO2 in SX- and HX-PES clearly show the opening of a gap at EF across the metal-insulator transition. Spectral changes in the V 2p and O 1s core levels were also observed. In addition, 3 d1 configuration correlated metals SrVO3 and CaVO3 are typical materials whose valence band spectra are compared with dynamical mean-field theory. The V 2p and V 1s core level HX-PES of SrVO3 and CaVO3 show clear additional well-screened features. These features originate from bulk screening by a coherent band at EF. These spectra are nicely reproduced by a cluster model calculation, indicating a difference of the parameter V* for the interaction strength between the central V 3d orbitals and the coherent band.
Original language | English |
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Pages (from-to) | 421-425 |
Number of pages | 5 |
Journal | Journal of Electron Spectroscopy and Related Phenomena |
Volume | 156-158 |
DOIs | |
Publication status | Published - May 2007 |
Externally published | Yes |
Keywords
- Bulk electronic structure
- Photoemission
- Vanadium oxides
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Radiation
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Spectroscopy
- Physical and Theoretical Chemistry