TY - JOUR
T1 - Electronic structure of organic carrier transporting material/metal interfaces as a model interface of electroluminescent device studied by UV photoemission
AU - Sugiyama, K.
AU - Yoshimura, D.
AU - Ito, E.
AU - Miyazaki, T.
AU - Hamatani, Y.
AU - Kawamoto, I.
AU - Ishii, H.
AU - Ouchi, Y.
AU - Seki, K.
N1 - Funding Information:
The authors thank Dr. Syun Egusa and Dr. Takashi Sasaki of Advanced Research Laboratory, Toshiba R&D Center for the gift of the sample material. This work was performed as a Joint Studies Program of the UVSOR facility of the Institute for Molecular Science (No.6-H217). This work was supported in part by the Grant-in Aids for Scientific Research (Nos. 07CE2004, 08CE004, 07NP0303, 04403001) and by the Venture Business Laboratory Program, both from the Ministry of Education, Science, Sports, and Culture of Japan,
PY - 1997/2/28
Y1 - 1997/2/28
N2 - Electronic structures of N,N′-diphenyl-N,N′-(3-methylphenyl)-1,1′-biphenyl-4,4′- diamine (TPD) / metal and N,N′-diphenyl-1,4,5,8-naphtyltetracarboxylimide (DP-NTCI)/metal interfaces were directly investigated as a model interface of organic electroluminescent (EL) devices using UV photoemission spectroscopy (UPS). At the organic / metal interfaces, abrupt shift of vacuum level was observed, in contrast to the traditional assumption of common vacuum level at the interface. For understanding EL devices, we see the necessity of the direct observation of the interfacial electronic structure by UPS or other techniques for understanding EL devices.
AB - Electronic structures of N,N′-diphenyl-N,N′-(3-methylphenyl)-1,1′-biphenyl-4,4′- diamine (TPD) / metal and N,N′-diphenyl-1,4,5,8-naphtyltetracarboxylimide (DP-NTCI)/metal interfaces were directly investigated as a model interface of organic electroluminescent (EL) devices using UV photoemission spectroscopy (UPS). At the organic / metal interfaces, abrupt shift of vacuum level was observed, in contrast to the traditional assumption of common vacuum level at the interface. For understanding EL devices, we see the necessity of the direct observation of the interfacial electronic structure by UPS or other techniques for understanding EL devices.
KW - Metal/semiconductor interfaces
KW - Photoelectron spectroscopy
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U2 - 10.1016/s0379-6779(97)81185-x
DO - 10.1016/s0379-6779(97)81185-x
M3 - Article
AN - SCOPUS:0031070714
SN - 0379-6779
VL - 86
SP - 2425
EP - 2426
JO - Synthetic Metals
JF - Synthetic Metals
IS - 1-3
ER -