Electronic structure of the filled skutterudite compound (formula presented)

K. Kanai; N. Takeda; S. Nozawa; T. Yokoya; M. Ishikawa; S. Shin

doi:10.1103/PhysRevB.65.041105

Electronic structure of the filled skutterudite compound (formula presented)

K. Kanai, N. Takeda, S. Nozawa, T. Yokoya, M. Ishikawa, S. Shin

Research output: Contribution to journal › Article › peer-review

Abstract

Ultrahigh-resolution photoemission spectra of (formula presented) reveal crossover behavior into a low carrier state. The density of states (DOS) around the Fermi level (formula presented) decreases on lowering temperature and the semimetalliclike DOS is observed at 5.9 K. The temperature dependence of DOS at (formula presented) is explained in terms of the development of the coherence. The smaller hybridization strength between the Ru- (formula presented) state and the (formula presented) state prevents the hybridization gap from opening in (formula presented) which is realized in (formula presented).

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.65.041105
Publication status	Published - Jan 1 2002
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.65.041105

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abstract = "Ultrahigh-resolution photoemission spectra of (formula presented) reveal crossover behavior into a low carrier state. The density of states (DOS) around the Fermi level (formula presented) decreases on lowering temperature and the semimetalliclike DOS is observed at 5.9 K. The temperature dependence of DOS at (formula presented) is explained in terms of the development of the coherence. The smaller hybridization strength between the Ru- (formula presented) state and the (formula presented) state prevents the hybridization gap from opening in (formula presented) which is realized in (formula presented).",

author = "K. Kanai and N. Takeda and S. Nozawa and T. Yokoya and M. Ishikawa and S. Shin",

year = "2002",

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T1 - Electronic structure of the filled skutterudite compound (formula presented)

AU - Kanai, K.

AU - Takeda, N.

AU - Nozawa, S.

AU - Yokoya, T.

AU - Ishikawa, M.

AU - Shin, S.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Ultrahigh-resolution photoemission spectra of (formula presented) reveal crossover behavior into a low carrier state. The density of states (DOS) around the Fermi level (formula presented) decreases on lowering temperature and the semimetalliclike DOS is observed at 5.9 K. The temperature dependence of DOS at (formula presented) is explained in terms of the development of the coherence. The smaller hybridization strength between the Ru- (formula presented) state and the (formula presented) state prevents the hybridization gap from opening in (formula presented) which is realized in (formula presented).

AB - Ultrahigh-resolution photoemission spectra of (formula presented) reveal crossover behavior into a low carrier state. The density of states (DOS) around the Fermi level (formula presented) decreases on lowering temperature and the semimetalliclike DOS is observed at 5.9 K. The temperature dependence of DOS at (formula presented) is explained in terms of the development of the coherence. The smaller hybridization strength between the Ru- (formula presented) state and the (formula presented) state prevents the hybridization gap from opening in (formula presented) which is realized in (formula presented).

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Electronic structure of the filled skutterudite compound (formula presented)

Abstract

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